Advanced Semiconductor Inc HF8-28S Datasheet

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

B

The ASI HF8-28S is Designed for

FEATURES:

HF8-28S

PACKAGE STYLE .380 4L STUD

.112x45°

A

•• PG = 21 dB min. at 8 W/30 MHz

•• IMD3 = -30 dBc max. at 8 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

I

C

V

CBO

V

CEO

V

CES

V

EBO

P

DISS

T

J

T

STG

θθ

JC

13.0 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

1.0 A
65 V
35 V
65 V

4.0 V

13.5 OC/W

CHARACTERISTICS T

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

BV
BV
BV

I

h

CBO

CES

CEO

EBO

CBO

FE

IC = 200 mA 65 V
IC = 200 mA 65 V
IC = 200 mA 35 V
IE = 10 mA 4.0 V
VCB = 30 V 1.0 mA
VCE = 5.0 V IC = 200 mA 5.0 --- ---

= 25 OC

C

B

C

EE

ØC

DIM

A
B
C
D
E
F
G
H
I
J

D

#8-32 UNC-2A

E

MINIMUM

inches / mm

.220 / 5.59 .230 / 5.84

.980 / 24.89

.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54

.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45

H

G

F

ORDER CODE: ASI10601

I

J

MAXIMUM

inches / mm

.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30

.490 / 12.45.450 / 11.43

.750 / 19.05

C

OB

G

P

VCB = 30 V f = 1.0 MHz 15 pF
VCC = 28 V PIN = 1.0 W f = 150 MHz 10 dB

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.