Advanced Semiconductor Inc HF75-50F Datasheet

HF75-50F

DESCRIPTION:

ORDER CODE: ASI10610

NPN SILICON RF POWER TRANSISTOR

The ASI HF75-50F is Designed for

FEATURES:

• PG = 14 dB min. at 75 W/30 MHz

• IMD3 = 50 dBc max. at 75 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

V
V
V

P

T

I

C

CBO

CEO

EBO

DISS

T

STG

θθ

JC

127 W @ TC = 25 OC

J

3.25 A
110 V

55 V

4.0 V

-65 OC to +200 OC

-65 OC to +150 OC

2.0 OC/W

PACKAGE STYLE .380 4L FLG

.112 x 45°

DIM

B

E

B

F

MINIMUM

A
B
C
D
E
F
G
H

I

J

.220 / 5.59 .230 / 5.84
.785 / 19.94
.720 / 18.29 .730 / 18.54
.970 / 24.64

.004 / 0.10 .006 / 0.15

.160 / 4.06 .180 / 4.57

.240 / 6.10 .255 / 6.48

D

inches / mm

A

Ø.125 NOM.

C

E

C

E

FULL R

J

.125

I

H

G

MAXIMUM

inches / mm

.980 / 24.89

.385 / 9.78

.105 / 2.67.085 / 2.16

.280 / 7.11

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV
BV

BV

h

C

G

IMD

CES

CE0

EBO

FE

ob

P

3

ηη

C

IC = 100 mA 110 V
IC = 200 mA 55 V
IE = 10 mA 4.0 V

VCE = 6.0 V IC = 1.4 A 19 --- 50 --­VCB = 50 V f = 1.0 MHz 100 pF

14

VCE = 50 V P

= 75 W(PEP)

OUT

---

--- -30

37

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

dB

dBc

%