Advanced Semiconductor Inc HF75-12 Datasheet

Specifications are subject to change without notice.

OUT

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The HF75-12 is Designed for 12.5 Volt
Class AB & C HF Power Amplifier
Applications in the 2 to 32 MHz Band.

FEATURES INCLUDE:

HF75-12

• Replacement for MRF454 & SD1405

PACKAGE STYLE .500" 4L FLANGE

• PG = 18 dB Typical @ 30MHz & 75W

• Withstands 20:1 Load VSWR

MAXIMUM RATINGS

I

C

V

CB

V

CE

V

EB

P

T

DISS

T

STG

θθ

JC

J

270 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

CHARACTERISTICS T

SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

CBO

BV

CES

BV

CEO

BV

EBO

I

CES

h

FE

C

OB

G

PE

IMD

3

ηη

C

20 A

36 V
18 V

4.0 V

0.65 OC/W

= 25 OC

C

IC = 50 mA 36 V
IC = 100 mA 36 V
IC = 100 mA 18 V
IE = 10 mA 4.0 V
VCE = 15 V 15 mA
VCE = 5.0 V IC = 5.0 A 20 200 --­VCB = 12.5 V f = 1.0 MHz 350 pF

VCC = 12.5 V ICQ = 100 mA P
f = 30.000 & 30.001 MHz

= 75 W(PEP)

13

-30

1 = COLLECTOR 2 = BASE

3 & 4 = EMITTER

14

55

dB

dBc

%

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1