Advanced Semiconductor Inc HF50-12F Datasheet

HF50-12F

DESCRIPTION:

ORDER CODE: ASI10596

E

NPN SILICON RF POWER TRANSISTOR

The ASI HF50-12F is Designed for

FEATURES:

• PG = 16 dB min. at 50 W/30 MHz

• IMD3 = -30 dBc max. at 30 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

V
V
V

P

T

I

C

CBO

CEO

EBO

DISS

T

STG

θθ

JC

183 W @ TC = 25 OC

J

12.0 A
36 V
18 V

3.5 V

-65 OC to +200 OC

-65 OC to +150 OC

1.05 OC/W

PACKAGE STYLE .380 4L FLG

.112 x 45°

DIM

B

E

B

F

MINIMUM

A
B
C
D
E
F
G
H

I

J

.220 / 5.59 .230 / 5.84
.785 / 19.94
.720 / 18.29 .730 / 18.54
.970 / 24.64

.004 / 0.10 .006 / 0.15

.160 / 4.06 .180 / 4.57

.240 / 6.10 .255 / 6.48

D

inches / mm

A

Ø.125 NOM.

C

C

E

FULL R

J

.125

I

H

G

MAXIMUM

inches / mm

.980 / 24.89

.385 / 9.78

.105 / 2.67.085 / 2.16

.280 / 7.11

CHARACTERISTICS T

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

CBO

BV

CES

BV

CEO

BV

EBO

I

CES

h

FE

C

OB

G

P

ηη

C

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

= 25 OC

C

IC = 50 mA 36 V
IC = 100 mA 36 V
IC = 50 mA 18 V
IE = 10 mA 3.5 V
VCE = 15 V 10 mA
VCE = 5.0 V IC = 5.0 A 10 --- ---

VCB = 12.5 V f = 1.0 MHz 300 pF
VCE = 12.5 V PIN = 7.0 W f = 50 MHz

P

= 50 W(PEP)

OUT

10

Specifications are subject to change without

55

dB

%