Advanced Semiconductor Inc HF50-12 Datasheet

NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band.
FEATURES INCLUDE:
High Gain, 16 dB Typical @ 30 MHz
Emitter Ballasting
Withstands Severe Mismatch
HF50-12
MAXIMUM RATINGS
P
T
I V V V
DISS
T
STG
θθ
C
CB
CE
EB
JC
175 W @ TC = 25 OC
J
-65 OC to +200 OC
-65 OC to +150 OC
10 A 36 V 18 V
4.0 V
1.0 OC/W
CHARACTERISTICS T
= 25 OC
C
PACKAGE STYLE .380" 4L FLANGE
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV BV BV
I
C G
IMD
h
CES
FE
ob
ηη
CES
CEO
EBO
PE
IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5.0 V IC = 5.0 A VCB = 12.5 V f = 1.0 MHz
VCC = 12.5 V ICQ = 50 mA P f = 30 MHz
= 50 W(PEP)
OUT
36 18
4.0
20
200
15 16
-30
55
10
mA
pF dB
dB
V V V
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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
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