Advanced Semiconductor Inc HF30-28S Datasheet
HF30-28S
DESCRIPTION:
ORDER CODE: ASI10605
E
NPN SILICON RF POWER TRANSISTOR
The ASI HF30-28S is Designed for
FEATURES:
• PG = 20 dB min. at 30 W/30 MHz
•• IMD3 = -30 dBc max. at 30 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
V
P
T
I
V
V
EBO
DISS
T
STG
θθ
C
CB
CE
JC
60 W @ TC = 25 OC
J
-65 OC to +200 OC
-65 OC to +150 OC
5.0 A
65 V
35 V
4.0 V
2.9 OC/W
PACKAGE STYLE .380 4L STUD
DIM
A
B
C
D
E
F
G
H
I
J
.112x45°
B
D
#8-32 UNC-2A
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45
ØC
A
C
E
B
I
H
J
G
F
E
MAXIMUM
inches / mm
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45.450 / 11.43
.750 / 19.05
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CES
I
CBO
h
FE
C
OB
G
P
ηη
C
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
= 25 OC
C
IC = 10 mA 65 --- V
IC = 200 mA 65 --- V
IC = 200 mA 35 --- V
IE = 10 mA 4.0 --- V
VCE = 30 V --- 10 mA
VCE = 30 V --- 1.0 mA
VCE = 5.0 V IC = 500 mA 5.0 200 ---
VCB = 30V f = 1.0 MHz --- 65 pF
VCE = 28 V PIN = 7.0 W f = 175 MHz
P
= 30 W(PEP)
OUT
7.6
60
Specifications are subject to change without notice.
---
dB
%
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