Advanced Semiconductor Inc HF30-28F Datasheet

HF30-28F

DESCRIPTION:

ORDER CODE: ASI10604

E

NPN SILICON RF POWER TRANSISTOR

The ASI HF30-28F is Designed for

FEATURES:

• PG = 20 dB min. at 30 W/30 MHz

•• IMD3 = -30 dBc max. at 30 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

V
V
V

P

T

I

C

CBO

CEO

EBO

DISS

T

STG

θθ

JC

60 W @ TC = 25 OC

J

-65 OC to +200 OC

-65 OC to +150 OC

5.0 A
65 V
35 V

4.0 V

2.9 OC/W

PACKAGE STYLE .380 4L FLG

.112 x 45°

DIM

B

E

B

F

MINIMUM

A
B
C
D
E
F
G
H

I

J

.220 / 5.59 .230 / 5.84
.785 / 19.94
.720 / 18.29 .730 / 18.54
.970 / 24.64

.004 / 0.10 .006 / 0.15

.160 / 4.06 .180 / 4.57

.240 / 6.10 .255 / 6.48

D

inches / mm

A

Ø.125 NOM.

C

C

E

FULL R

J

.125

I

H

G

MAXIMUM

inches / mm

.980 / 24.89

.385 / 9.78

.105 / 2.67.085 / 2.16

.280 / 7.11

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

BV
BV
BV

I

I

h

C

G

CBO

CEO

EBO

CES

CBO

FE

OB

ηη

CES

P

C

IC = 10 mA 65 V
IC = 200 mA 65 V
IC = 200 mA 35 V
IE = 10 mA 4.0 V
VCE = 30 V 10 mA
VCE = 30 V 1.0 mA
VCE = 5.0 V IC = 500 mA 5 200 ---

VCB = 30 V f = 1. 0 MHz 65 pF

VCE = 28 V PIN = 7.0 W f = 175 MHz

7.6
60

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

dB

%