Advanced Semiconductor Inc HF250-50 Datasheet

HF250-50

DESCRIPTION:

ORDER CODE: ASI10615

C

E

NPN SILICON RF POWER TRANSISTOR

The ASI HF250-50 is Designed for

FEATURES:

• PG = 14 dB min. at 220 W/30 MHz

• IMD3 = 150 dBc max. at 220 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

V
V
V

P

T

I

C

CBO

CEO

EBO

DISS

T

STG

θθ

JC

140 W @ TC = 25 OC

J

-65 OC to +200 OC

-65 OC to +150 OC

40 A

110 V

55 V

4.0 V

0.40 OC/W

PACKAGE STYLE 0.500 4L FLG

.112x45°

D

F

G

.125 / 3.18

.125 / 3.18

L

E

Ø.125 NOM.

K

J

I

MAXIMUM

inches / mm

.230 / 5.84

.255 / 6.48

.7.30 / 18.54

.980 / 24.89

.110 / 2.79
.175 / 4.45
.280 / 7.11

1.050 / 26.67

DIM

A

FULL R

C

B

B

E

H

MINIMUM

inches / mm

A
B
C
D
E
F
G
H
I
J
K
L

.220 / 5.59

.245 / 6.22

.720 / 18.28

.970 / 24.64
.495 / 12.57 .505 / 12.83

.003 / 0.08 .007 / 0.18
.090 / 2.29
.150 / 3.81

.980 / 24.89

CHARACTERISTICS T

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

CEO

BV

CES

BV

EBO

I

CEO

I

CES

h

FE

C

ob

G

P

IMD

3

ηη

C

IC = 200 mA 55 V
IC = 200 mA 110 V
IE = 20 mA 4.0 V
VCE = 30 V 10 mA
VCE = 60 V 10 mA
VCE = 6.0 V IC = 10 A 15 45 ---

VCB = 50 V f = 1.0 MHz 360 pF

VCE = 50 V ICQ = 150 mA P

= 25 OC

C

= 250 W(PEP)

OUT

14.5

-30

37

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

dB

dBc

%