Advanced Semiconductor Inc HF220-50 Datasheet

Specifications are subject to change without notice.

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

ORDER CODE: ASI10614

E

E

The HF220-50 is Designed for
High Linearity Class AB HF Power

Amplifier Applications up to 30 MHz.

FEATURES:

• PG = 14 dB Typical at 220 W/30 MHz

• IMD3 = -32 dBc Typ. at 220 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

HF220-50

PACKAGE STYLE .500 4L FLG

.112x45°

A

FULL R

C

B

B

E

H

L

Ø.125 NOM.

C

D

F

G

K

J

I

I

C

V

CBO

V

CEO

V

EBO

P

DISS

T

J

T

STG

θθ

JC

320 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

CHARACTERISTICS T

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

CBO

BV

CEO

BV

EBO

I

CEO

I

CES

h

FE

12 A

110 V

55 V

4.0 V

DIM

A
B
C
D
E
F
G
H
I
J
K
L

MINIMUM

inches / mm

.220 / 5.59

.245 / 6.22

.720 / 18.28

.970 / 24.64
.495 / 12.57 .505 / 12.83

.003 / 0.08 .007 / 0.18
.090 / 2.29
.150 / 3.81

.980 / 24.89

.125 / 3.18

.125 / 3.18

MAXIMUM

inches / mm

.230 / 5.84

.255 / 6.48

.7.30 / 18.54

.980 / 24.89

.110 / 2.79
.175 / 4.45
.280 / 7.11

1.050 / 26.67

0.7 OC/W

= 25 OC

C

IC = 200 mA 110 V
IC = 200 mA 55 V
IE = 20 mA 4.0 V
V

= 30 V 5 mA

CE

VCE = 55 V 10 mA
VCE = 6 V IC = 10 A 15 80 ---

C

ob

G

IMD

ηη

P

3

C

VCB = 50 V f = 1.0 MHz 330 pF

VCE = 50 V ICQ =150 mA P

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

= 220 W(PEP)

OUT

13

40

-32 -30

dB

dBc

%