Advanced Semiconductor Inc HF15-28F Datasheet

HF15-28F

DESCRIPTION:

ORDER CODE: ASI10602

NPN SILICON RF POWER TRANSISTOR

The ASI HF15-28F is Designed for

FEATURES:

• PG = 21 dB min. at 15 W/30 MHz

• IMD3 = -30 dBc max. at 15 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

V
V
V

P

T

I

C

CBO

CEO

EBO

DISS

T

STG

θθ

JC

40 W @ TC = 25 OC

J

-65 OC to +200 OC

-65 OC to +150 OC

4.0 A
65 V
35 V

4.0 V

4.4 OC/W

PACKAGE STYLE .380 4L FLG

.112 x 45°

DIM

B

E C

B

F

MINIMUM

A
B
C
D
E
F
G
H

I

J

.220 / 5.59 .230 / 5.84
.785 / 19.94
.720 / 18.29 .730 / 18.54
.970 / 24.64

.004 / 0.10 .006 / 0.15

.160 / 4.06 .180 / 4.57

.240 / 6.10 .255 / 6.48

D

inches / mm

A

Ø.125 NOM.

FULL R

J

.125

E

C

E

I

H

G

MAXIMUM

inches / mm

.980 / 24.89

.385 / 9.78

.105 / 2.67.085 / 2.16

.280 / 7.11

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

BV

BV

I

h

C

G

CEO

EBO

CBO

FE

OB

f

T

CES

P

IC = 200 mA 35 V
IC = 200 mA 65 V
IE = 10 mA 4.0 V
VCB = 30 V 2.0 mA
VCE = 5.0 V IC = 200 mA 5.0 --- ---

VCB = 30 V f = 1.0 MHz 50 pF
VCE = 28 V f = 150 MHz

VCE = 10 V IC = 200 mA f = 100 MHz

10

250

---

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change witout notice.

dB

MHz