Advanced Semiconductor Inc HF150-50S Datasheet

Specifications are subject to change without notice.

HF150-50S

DESCRIPTION:

NPN SILICON RF POWER TRANSISTOR

The ASI HF150-50S is Designed for

FEATURES:

• PG = 14 dB min. at 150 W/30 MHz

• IMD3 = 100 dBc max. at 150 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

V
V
V

P

T

I

C

CBO

EBO

CEO

DISS

T

STG

θθ

JC

233 W @ TC = 25 OC

J

-65 OC to +200 OC

-65 OC to +150 OC

10 A

110 V

4.0 V
55 V

0.75 OC/W

PACKAGE STYLE .500 4L STUD (A)

A

Ø .630 NOM

C

EE

D

B

G

F

H

MAXIMUM

inches / mm

1.050 / 26.67
.555 / 14.10
.505 / 12.83

.007 / 0.18

.830 / 21.08

.198 / 5.03.185 / 4.70

DIM

A
B
C
D
E
F
G
H

.112 x 45°

C B

E

1/4-28 UNF-2A

MINIMUM

inches / mm

.220 / 5.59 .230 / 5.84

.545 / 13.84
.495 / 12.57

.003 / 0.08

.497 / 12.62 .530 / 13.46

ORDER CODE: ASI10613

CHARACTERISTICS T

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

CBO

BV

CES

BV

CEO

BV

EBO

I

CEO

I

CES

h

FE

C

ob

G

P

IMD

3

ηη

C

IC = 100 mA 110 V
IC = 100 mA 110 V
IC = 100 mA 55 V
IE = 10 mA 4.0 V
VCE = 30 V 5 mA
VE = 60 V 5 mA
VCE = 6 V IC = 1.4 A 18 43.5 ---

VCB = 50 V f = 1.0 MHz 220 pF

VCE = 50 V ICQ =100 mA P

= 25 OC

C

= 150 W(PEP)

OUT

14

-30

37

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

dB

dBc

%