Advanced Semiconductor Inc HF10-12S Datasheet

HF10-12S

DESCRIPTION:

ORDER CODE: ASI10593

B

NPN SILICON RF POWER TRANSISTOR

The ASI HF10-12S is Designed for

FEATURES:

• PG = 20 dB min. at 10 W/30 MHz

• IMD3 = -30 dBc max. at 10 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

V
V
V

P

T

I

C

CBO

CEO

EBO

DISS

T

STG

θθ

JC

80 W @ TC = 25 OC

J

-65 OC to +200 OC

-65 OC to +150 OC

4.5 A
36 V
18 V

4.0 V

2.2 OC/W

PACKAGE STYLE .380 4L STUD

DIM

A
B
C
D
E
F
G
H
I
J

.112x45°

B

D

#8-32 UNC-2A

MINIMUM

inches / mm

.220 / 5.59 .230 / 5.84

.980 / 24.89

.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54

.090 / 2.29 .100 / 2.54
.155 / 3.94 .175 / 4.45

ØC

A

C

EE

I

H

J

G

F

E

MAXIMUM

inches / mm

.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30

.490 / 12.45.450 / 11.43

.750 / 19.05

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

BV
BV
BV

I

h

C

G

IMD

CBO

CES

CEO

EBO

CES

FE

ob

P

3

IC = 50 mA 36 V
IC = 50 mA 36 V
IC = 50 mA 18
IE = 10 mA 4.0 V
VCE = 15 V 5 mA
VCE = 5.0 V IC = 1.0 A 10 200 ---

VCB = 12.5 V f = 1.0 MHz 100 pF

VCC = 12.5V ICQ = 25 mA f = 30 MHz
P

= 10 W(PEP)

OUT

15 18

-30

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

dB

dBc