Advanced Semiconductor Inc HF10-12F Datasheet

HF10-12F

DESCRIPTION:

ORDER CODE: ASI10592

NPN SILICON RF POWER TRANSISTOR

The ASI HF10-12F is Designed for

FEATURES:

• PG = 20 dB min. at 10 W/30 MHz

• IMD3 = -30 dBc max. at 10 W(PEP)

• Omnigold™ Metalization System

MAXIMUM RATINGS

V
V
V

P

T

I

C

CBO

CEO

EBO

DISS

T

STG

θθ

JC

80 W @ TC = 25 OC

J

-65 OC to +200 OC

-65 OC to +150 OC

4.5 A
36 V
18 V

4.0 V

2.2 OC/W

PACKAGE STYLE .380 4L FLG

.112 x 45°

DIM

B

E C

B

MINIMUM

inches / mm

D

F

A
B
C
D
E
F
G
H

I

J

.220 / 5.59 .230 / 5.84
.785 / 19.94
.720 / 18.29 .730 / 18.54
.970 / 24.64

.004 / 0.10 .006 / 0.15

.160 / 4.06 .180 / 4.57

.240 / 6.10 .255 / 6.48

A

Ø.125 NOM.

FULL R

J

.125

E

C
E

I

H

G

MAXIMUM

inches / mm

.980 / 24.89

.385 / 9.78

.105 / 2.67.085 / 2.16

.280 / 7.11

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

BV
BV
BV

I

h

C

G

IMD

CBO

CES

CEO

EBO

CES

FE

ob

PE

3

IC = 50 mA 36 V
IC = 50 mA 36 V
IC = 50 mA 18 V
IE = 5 mA 4.0 V
VCE = 15 V 5 mA
VCE = 5.0 V IC = 1.0 A 10 200 ---

VCB = 12.5 V f = 1.0 MHz 100 pF

VCC = 12.5 V ICQ = 25 mA f = 30 MHz
P

= 10 W(PEP)

OUT

15 18 ---

-30

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

dB
dB