Advanced Semiconductor Inc CBSL30B Datasheet

DESCRIPTION:

ORDER CODE: ASI10583

CBSL30B

NPN SILICON RF POWER TRANSISTOR

The ASI CBSL30B is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

V

CBO

V

CES

V

EBO

P

DISS

TJ

T

STG

θθJC

43 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

5.0 A
48 V
45 V

4.0 V

3.0 OC/W

PACKAGE STYLE .250 BAL FLG

DIM

A
B
C
D
E
F
G
H
I
J
K
L
M
N

.020 x 45°

E

C

D

F

J

MINIMUM

inches / mm

.055 / 1.40

.243 / 6.17

.630 / 16.00

.555 / 14.10
.739 / 18.77

.315 / 8.00
.002 / 0.05
.055 / 1.40 .065 / 1.65

.075 1.91

.245 / 6.22 .257 / 6.53

B

G

H

I

A

.060 / 1.52

.125 / 3.18

.092 / 2.34

Ø.130 NOM.

.050 x 45°

N

K

MAXIMUM

inches / mm

.065 / 1.65

.255 / 6.48

.670 / 17.01

.565 / 14.35
.750 / 19.05

.327 / 8.31
.006 / 0.15

.095 / 2.41
.190 / 4.83

L

M

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 50 mA 48 50 --- V

CBO

BV

IC = 20 mA 25 30 --- V

CEO

BV

IE = 5 mA 3.5 4.0 --- V

EBO

I

VCB = 24 V 1.0 mA

CBO

hFE VCE = 5.0 V IC = 100 mA 20 100 ---

COB VCB = 24 V f = 1.0 MHz 25 pF

PG

VCC = 24 V ICQ = 2 X 75 mA f = 960 MHz
P

= 30 W

OUT

7.5

dB

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.