NPN SILICON RF POWER TRANSISTOR
The ASI AVD090F is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCB
P
DISS
TJ
T
STG
6.5 A PEAK
55 V
250 W PEAK
-65 OC to +200 OC
-65 OC to +150 OC
AVD090F
PACKAGE STYLE .250 2L FLG (B)
C
B
H
DIM
A
B
C
D
E
F
G
H
I
J
K
MINIMUM
inches / mm
.095 / 2.41 .105 / 2.67
1.050 / 26.67
.245 / 6.22
.120 / 3.05
.552 / 14.02
.790 / 20.07
.003 / 0.08 .007 / 0.18
.052 / 1.32 .072 / 1.83
.120 / 3.05
A
Ø D
F
.210 / 5.33
.100 X 45°
E
G
.088 x 45°
CHAMFER
J
I
MAXIMUM
inches / mm
.255 / 6.48
.140 / 3.56
.572 / 14.53
.810 / 20.57
.285 / 7.24
.130 / 3.30
K
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 10 mA 65 V
CBO
BV
IC = 10 mA RBE = 10 Ω 65 V
CER
BV
IE = 1 mA 3.5 V
EBO
I
VCB = 50 V 6.25 mA
CES
hFE VCE = 5.0 V IC = 500 mA 15 120 ---
PG
ηηC
0.6 OC/W
= 25 OC
C
VCC = 50 V P
= 90 W f = 1025 - 1150 MHz
OUT
8.5
35
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.