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NPN SILICON RF POWER TRANSISTOR
The ASI AVD0.5P is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCE
P
DISS
TJ
T
STG
300 mA
20 V
--- W
-65 OC to +200 OC
-65 OC to +150 OC
AVD0.5P
PACKAGE STYLE .280 4L PILL
ØB
D
DIM
A
B
C
D
E
F
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.275 / 6.99
.004 / 0.10
.050 / 1.27
.118 / 3.00
A
S
D
G
S
ØC
MAXIMUM
inches / mm
1.055 / 26.80
.285 / 7.24
.006 / 0.15
.060 . 1.52
.130 / 3.30
F
E
θθJC
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1 mA 50 V
CBO
BV
IC = 5 mA 20 V
CEO
BV
IE = 1 mA 3.5 V
EBO
I
VCE = 28 V 1.0 mA
CES
35.0 OC/W
= 25 OC
C
hFE VCE = 5.0 V IC = 100 mA 15 120 ---
PG VCC = 12.5 V P
= 0.5 W f = 1025 - 1150 MHz
OUT
10 dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.