Advanced Semiconductor Inc ASI2307 Datasheet

DESCRIPTION:

Hz

ORDER CODE: ASI10536

NPN SILICON RF POWER TRANSISTOR

The ASI 2307 is Designed for General
Purpose Class C Power Amplifier
Applications up to 3000 MHz.

FEATURES:

• PG = 9.5 dB min. at 7 W / 2300 M

• Hermetic Microstrip Package

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

VCC

P

DISS

TJ

T

STG

21.4 W @ TC ≤ 50 OC

-65 OC to +200 OC

-65 OC to +200 OC

1.2 A
26 V

ASI2307

PACKAGE STYLE .250 2L FLG

C

B

E

G

L

DIM

A
B
C
D
E
F
G
H
I
J
K
L
M
N
P

MINIMUM

inches / mm

.028 / 0.71

.740 / 18.80

.245 / 6.22
.128 / 3.25

.110 / 2.79

.560 / 14.22 .570 / 14.48
.790 / 20.07

.225 / 5.72
.165 / 4.19 .185 / 4.70
.003 / 0.08
.058 / 1.47

.149 / 3.78

ØD

H

F

I

J

K

.125 / 3.18

.117 / 2.97

A

.060 x 45°

CHAMFER

P

N

M

MAXIMUM

inches / mm

.032 / 0.81

.255 / 6.48
.132 / 3.35

.117 / 2.97

.810 / 20.57

.235 / 5.97

.007 / 0.18
.068 / 1.73
.135 / 3.43.119 / 3.02
.187 / 4.75

θθJC

7.0 OC/W

CHARACTERISTICS T

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 1 mA 44 V

CBO

BV

IC = 5 mA RBE = 10 Ω 44 V

CER

BV

IE = 1 mA 3.5 V

EBO

I

VCB = 22 V 0.5 mA

CBO

hFE VCE = 5.0 V IC = 500 mA 30 300 --­Cob VCB = 22 V f = 1.0 MHz

PG

ηηC

VCC = 22 V P

= 25 OC

C

= 7.0 W f = 2.3 GHz

OUT

8.5 pF

9.5

dB

33

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

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Specifications are subject to change without notice.