Advanced Semiconductor Inc ASI2223-12 Datasheet

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

CHARACTERISTICS T

C

= 25 OC

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

CBO

IC = 15 mA 45 V

BV

CER

IC = 15 mA 45 V

BV

EBO

IE = 1.5 mA 3.5 V

I

CES

VCE = 22 V 1.5 mA

hFE VCE = 5.0 V IC = 1.0 A 30 300 ---

PG

ηηC

VCC = 22 V P

OUT

= 12 W f = 2.2 – 2.3

GHz

7.5
40

dB

%

NPN SILICON RF POWER TRANSISTOR

ASI223-12

DESCRIPTION:

The ASI 2223-12 is Designed for

FEATURES:

• Input Matching Network

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

1.5 A

VCC

25 V

P

DISS

33.0 W @ TC ≤ 70 OC

TJ

-65 OC to +200 OC

T

STG

-65 OC to +200 OC

θθJC

3.9 OC/W

PACKAGE STYLE .310 2L FLG

ORDER CODE: ASI10532

MINIMUM

inches / mm

.100 / 2.54

.286 / 7.26

.306 / 7.77

B
C
D
E
F
G

A

MAXIMUM

.318 / 8.08

.306 / 7.77

inches / mm

H

DIM

K
L

I
J

.552 / 14.02

.300 / 7.62

.572 / 14.53

.320 / 8.13

P

N

M

.118 / 3.00

.003 / 0.08

.131 / 3.33

.006 / 0.15

.790 / 20.07 .810 / 20.57

.072 / 1.83

.148 / 3.76

.120 / 3.05

R

.052 / 1.32

.230 / 5.84

.095 / 2.41 .105 / 2.67

.050 / 1.27

.400 / 10.16

.119 / 3.02

.110 / 2.79 .130 / 3.30

I

G

C

D

F

Ø E

N

H

4x .062 x 45°

R

P

M

L

J
K

2 x B

.040 x 45°

A