Advanced Semiconductor Inc ASI2010 Datasheet

DESCRIPTION:

Hz

ORDER CODE: ASI10530

ASI2010

NPN SILICON RF POWER TRANSISTOR

The ASI 2010 is Designed for General
Purpose Class C Power Amplifier
Applications up to 2300 MHz.

FEATURES:

• PG = 5 dB min. at 10 W/ 2,000 M

• Hermetic Microstrip Package

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC 1.5 A

VCC 35 V

P

DISS

TJ -65 OC to +200 OC

T

-65 OC to +200 OC

STG

θθJC 5.0 OC/W

35 W @ TC = 25 OC

PACKAGE STYLE .250 2L FLG

A

DIM

ØD

C

B

E

G

L

F

H

I

J

K

MINIMUM

inches / mm

A
B
C
D
E
F
G
H
I
J
K
L
M
N
P

.028 / 0.71

.740 / 18.80

.245 / 6.22
.128 / 3.25

.110 / 2.79

.560 / 14.22 .570 / 14.48
.790 / 20.07

.225 / 5.72
.165 / 4.19 .185 / 4.70
.003 / 0.08
.058 / 1.47

.149 / 3.78

.125 / 3.18

.117 / 2.97

.060 x 45°

CHAMFER

N

M

MAXIMUM

inches / mm

.032 / 0.81

.255 / 6.48
.132 / 3.35

.117 / 2.97

.810 / 20.57

.235 / 5.97

.007 / 0.18
.068 / 1.73
.135 / 3.43.119 / 3.02
.187 / 4.75

P

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 5 mA 45 V

CBO

BV

IC = 15 mA RBE = 10 Ω 45 V

CER

BV

IE = 1 mA 3.5 V

EBO

I

V

CBO

= 28 V 5.0 mA

CB

hFE VCE = 5.0 V IC = 1000 mA 15 120 --­Cob VCB = 28 V f = 1.0 MHz

PG

VCC = 28 V P

OUT

= 10 W f = 2.0 GHz

ηηC

7.5 pF

5.0

dB

35

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

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