Advanced Semiconductor Inc ASI2005 Datasheet

Hz
ORDER CODE: ASI10529
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI2005 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz.
FEATURES:
• PG = 10 dB min. at 5W/ 2,000 M
Hermetic Microstrip Package
Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCC
P
DISS
T
TJ
STG
29 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
1.0 A 35 V
ASI2005
PACKAGE STYLE .250 2L FLG
A
ØD
DIM
C
B
E
F
G
H
I
J
L
K
MINIMUM
inches / mm
A B C D E F G H I J K L M N P
.028 / 0.71
.740 / 18.80
.245 / 6.22 .128 / 3.25
.110 / 2.79
.560 / 14.22 .570 / 14.48 .790 / 20.07
.225 / 5.72 .165 / 4.19 .185 / 4.70 .003 / 0.08 .058 / 1.47
.149 / 3.78
.125 / 3.18
.117 / 2.97
.060 x 45°
CHAMFER
N
M
MAXIMUM
inches / mm
.032 / 0.81
.255 / 6.48 .132 / 3.35
.117 / 2.97
.810 / 20.57
.235 / 5.97
.007 / 0.18 .068 / 1.73 .135 / 3.43.119 / 3.02 .187 / 4.75
P
θθJC
CHARACTERISTICS T
8.5 OC/W
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1 mA 45 V
CBO
BV
IC = 5 mA RBE = 10 45 V
CER
BV
IE = 1 mA 3.5 V
EBO
I
VCB = 28 V 2.5 mA
CBO
hFE VCE = 5.0 V IC = 500 mA 30 120 --­Cob VCB = 28 V f = 1.0 MHz
PG
VCC = 28 V P
OUT
= 5.0 W f = 2.0 GHz
ηηC
5.0 pF
10
dB
35
%
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
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