Advanced Semiconductor Inc ASI1010 Datasheet
DESCRIPTION:
Hz
ORDER CODE: ASI10525
NPN SILICON RF POWER TRANSISTOR
The ASI 1010 is Designed for General
Purpose Class C Power Amplifier
Applications up to 1500 MHz.
FEATURES:
• PG = 12 dB min. at 10 W/ 1,000 M
• Hermetic Microstrip Package
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
VCC
P
DISS
TJ
T
STG
29 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +200 OC
1.0 A
35 V
ASI1010
PACKAGE STYLE .250 2L FLG
C
B
E
G
L
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
MINIMUM
inches / mm
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.110 / 2.79
.560 / 14.22 .570 / 14.48
.790 / 20.07
.225 / 5.72
.165 / 4.19 .185 / 4.70
.003 / 0.08
.058 / 1.47
.149 / 3.78
ØD
H
F
I
J
K
.125 / 3.18
.117 / 2.97
A
.060 x 45°
CHAMFER
P
N
M
MAXIMUM
inches / mm
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.810 / 20.57
.235 / 5.97
.007 / 0.18
.068 / 1.73
.135 / 3.43.119 / 3.02
.187 / 4.75
θθJC
CHARACTERISTICS T
8.5 OC/W
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 1.0 mA 45 V
CBO
BV
IC = 10 mA RBE = 10 Ω 45 V
CER
BV
IE = 1.0 mA 3.5 V
EBO
I
VCB = 28 V 2.5 mA
CBO
hFE VCE = 5.0 V IC = 500 mA 15 120 --Cob VCB = 28 V f = 1.0 MHz
PG
VCC = 28 V P
OUT
= 10 W f = 1.0 GHz
ηηC
10 pF
12
dB
50
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
%
Specifications are subject to change without notice.
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