Advanced Semiconductor Inc ASAT25 Datasheet

DESCRIPTION:

ASAT25

NPN SILICON RF POWER TRANSISTOR

The ASI ASAT25 is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC

V

CBO

V

CEO

V

EBO

P

DISS

TJ

T

STG

θθJC

50 W @ TC = 25 OC

-65 OC to +200 OC

-65 OC to +150 OC

2.6 A
45 V
12 V

3.0 V

3.5 OC/W

PACKAGE STYLE .250 2L FLG(A)

A

E

F

G

.124 / 3.15

.092 / 2.34

Ø .130 NOM.

I

MAXIMUM

inches / mm

.065 / 1.65

.253 / 6.43

.665 / 16.89

.749 / 19.02

.065 / 1.65
.095 / 2.41
.190 / 4.83
.255 / 6.48

.050 x 45°

L

J

K

DIM

.020 x 45°

D

C

B

M

H

MINIMUM

inches / mm

A
B
C
D
E
F
G
H
I
J
K
L
M

.055 / 1.40

.243 / 6.17
.635 / 16.13
.555 / 14.10 .565 / 14.35
.739 / 18.77

.315 / 8.00 .325 / 8.26

.002 / 0.05 .006 / 0.15

.055 / 1.40

.075 / 1.91

.245 / 6.22

ORDER CODE: ASI10520

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 6 mA 45 V

CBO

BV

IC = 6 mA 12 V

CEO

BV

IE = 6 mA 3.0 V

EBO

hFE VCE = 5.0 V IC = 1.2 A 15 150 ---

PG

ηηC

VCC = 28 V P
GHz

= 25 W f = 1.65

OUT

9.0
50

dB

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

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