Advanced Semiconductor Inc AJT150 Datasheet

DESCRIPTION:

Input Matching Network

ORDER CODE: ASI10548

AJT150

NPN SILICON RF POWER TRANSISTOR

The ASI AJT150 is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC
VCB
VCE

P

DISS

TJ

T

STG

θθJC

-65 OC to +200 OC

-65 OC to +150 OC

10 A
60 V
35 V

140 W

0.57 OC/W

PACKAGE STYLE .400 2L FLG (A)

H
J
K

.193 / 4.90

.100 / 2.54

A

.040 x 45°

F

M

MAXIMUM

inches / mm

.120 / 3.05

.396 / 10.06

.130 / 3.30

.510 / 12.95

.710 / 18.03

.006 / 0.18
.072 / 1.83.052 / 1.32

C

2xR

P

N

4x .062 x 45°

2xB

DIM

A
B
C
D
E
F
G
H
I
J
K
L
M
N
P

E

D

G

I

L

MINIMUM

inches / mm

.135 / 3.43 .145 / 3.68
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79

.395 / 10.03 .407 / 10.34

.490 / 12.45

.690 / 17.53
.890 / 22.61 .910 / 23.11

.003 / 0.08

.118 / 3.00 .131 / 3.33

.230 / 5.84

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 50 mA 35 V

CEO

BV

IC = 50 mA RBE = 10 Ω 60 V

CER

BV

IE = 10 mA 4.0 V

EBO

I

VBE = 50 V 5 mA

CES

hFE VCE = 5.0 V IC = 1.0 A 10 100 ---

PG

ηη

C

VCc = 50 V P

= 150 W f = 960 - 1215 MHz

OUT

7.5
40

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

dB

%

Specifications are subject to change without notice.