NPN SILICON RF POWER TRANSISTOR
The ASI AJT030 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 3.5 A
VCC 40 V
P
DISS
TJ -65 OC to +250 OC
T
-65 OC to +200 OC
STG
75 W @ TC ≤ 85 OC
AJT030
PACKAGE STYLE .400 2L FLG
L
J
DIM
N
B
D
C
G
F
H
MINIMUM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
inches / mm
.395 / 10.03
.003 / 0.08 .006 / 0.15
.118 / 3.00 .131 / 3.33
M
.140 / 3.56
.110 / 2.80
.110 / 2.80
.193 / 4.90
.063 / 1.60
.650 / 16.51
.386 / 9.80
.900 / 22.86
.450 / 11.43
.125 / 3.18
.405 / 10.29
.170 / 4.32
.062 / 1.58
A
P
E
Ø.120
I
R
MAXIMUM
inches / mm
.407 / 10.34
.230 / 5.84
.050 / 1.27
O
K
.062 x 45°
Q
θθJC 2.2 OC/W
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 10 mA 55 V
CBO
BV
IC = 20 mA RBE = 10 Ω 55 V
CER
BV
IE = 1.0 mA 3.5 V
EBO
I
VCE = 35 V 5.0 mA
CES
hFE VCE = 5.0 V IC = 1.0 A 15 150 ---
PG
VCC = 50 V P
= 30 W f = 960 - 1215 MHz
OUT
ηηC
7.8
40
dB
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
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