ADVANCED SEMICONDUCTOR UFT30-28 Service Manual
DESCRIPTION:
7.0 dB min. at 25 W/400 MHz
θθ
1.8 OC/W
ORDER CODE: ASI10666
G
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NPN SILICON RF POWER TRANSISTOR
UFT30-28
The UFT30-28 is Designed for Class
A and B Power Ampliifiers Operating
up to 500 MHz.
FEATURES:
• PG =
• ηηD = 60 % Typical
• Omnigold™ Metalization System
MAXIMUM RATINGS
ID
V
DDS
VGS
P
DISS
TJ
T
STG
100 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
5.0 A
65 V
±40 V
PACKAGE STYLE .380 4L FLG.
.112 x 45°
A
S
C
D
E
Ø.125 NOM.
D
S
FULL R
J
.125
I
H
G
MAXIMUM
inches / mm
.980 / 24.89
.385 / 9.78
.105 / 2.67.085 / 2.16
.280 / 7.11
DIM
B
F
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
I
J
.220 / 5.59 .230 / 5.84
.785 / 19.94
.720 / 18.29 .730 / 18.54
.970 / 24.64
.004 / 0.10 .006 / 0.15
.160 / 4.06 .180 / 4.57
.240 / 6.10 .255 / 6.48
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
V
DSS
I
DSS
I
GSS
VGS
GFS
C
ISS
C
OSS
C
RSS
PG
ηηD
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
= 25 OC
C
IDS = 10 mA 60
VDS = 28 V 4.0
VGS = 20 V 1.0
VDS = 10 V ID = 25 mA 1.0 6.0
VDS = 10 V ID = 500 mA 500
VDS = 28 V VGS = 0 V f = 1.0 MHz
VDD = 28 V IDQ = 25 mA P
f = 400 MHz
Specifications are subject to change without notice.
= 25 W
OUT
46
7.0
60
33
6.0
V
mA
µµA
V
mMho
pF
dB
%
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