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NPN SILICON RF POWER TRANSISTOR
TVV100
The ASI TVV100 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
150 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
16 A
65 V
33 V
3.5 V
0.8 OC/W
PACKAGE STYLE .400 8L FLG
G
F
E
.1925
.125
K
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
MINIMUM
inches / mm
.115 / 2.92
.065 / 1.65
.380 / 9.65
.735 / 18.67 .765 / 19.43
.645 / 16.38 .655 / 16.64
.895 / 22.73
.420 / 10.67
.003 / 0.08 .007 / 0.18
.120 / 3.05
.159 / 4.04
.395 / 10.03
D
B
H
.030 / 0.76
.360 / 9.14
.130 / 3.30
C
A
FULL R
O
I
J
4 x .060 R
N
M
L
MAXIMUM
inches / mm
.125 / 3.18
.075 / 1.91
.390 / 9.91
.905 / 22.99
.430 / 10.92
.130 / 3.30
.175 / 4.45
.280 / 7.11
.405 / 10.29
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 65 V
CBO
BV
IC = 50 mA RBE = 15 Ω 60 V
CER
BV
IC = 50 mA 33 V
CEO
BV
IE = 5.0 mA 3.5 V
EBO
hFE VCE = 5.0 V IC = 500 mA 20 150 ---
COB VCB = 28 V f = 1.0 MHz --- 60 --- pF
PG
VCE = 28 V I
P
= 100 W
OUT
C
11
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
dB