![](/html/ef/ef83/ef8316d457a74dd758041f8b9a8c957bcc0d589391ce2d5269f12ba8e02f8044/bg1.png)
= 2 X 3000 mA f = 860 MHz
查询ASI10652供应商
NPN SILICON RF POWER TRANSISTOR
TVU150
The ASI TVU150 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CEO
V
CES
V
EBO
P
DISS
TJ
T
STG
θθJC
300 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
25 A
28 V
60 V
3.5 V
0.55 OC/W
PACKAGE STYLE .400 BAL FLG(C)
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
.080x45°
E
D
C
.1925
I
.780 / 19.81
1.335 / 33.91 1.345 / 34.16
.850 / 21.59 .870 / 22.10
A
B
F
G
H
N
MINIMUM
inches / mm
.220 / 5.59 .230 / 5.84
.120 / 3.05
.380 / 9.65
.003 / 0.08
.060 / 1.52
.082 / 2.08 .100 / 2.54
.210 / 5.33
.435 / 11.05
1.090 / 27.69
FULL R
J
MAXIMUM
inches / mm
.130 / 3.30
.390 / 9.91
.820 / 20.83
.007 / 0.18
.070 / 1.78
.205 / 5.21
.407 / 10.34.395 / 10.03
(4X).060 R
M
L
K
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 100 mA 26 30 V
CEO
BV
IC = 100 mA RBE = 200 Ω 35 40 V
CER
BV
IC = 50 mA 60 80 V
CES
BV
IE = 10 mA 3.5 4.0 V
EBO
I
VCE = 30 V 10 mA
CES
= 25 OC
C
hFE VCE = 5.0 V IC = 1.0 A 30 45 120 ---
COB VCB = 26 V f = 1.0 MHz
PG
IMD1
Load
Mismatch
VCC = 26 V I
P
= 40 W
OUT
CQ
VCC = 26 V ICQ = 2 X 150 mA P
VSWR = 5:1 @ all phase angles
= 150 W PEP
OUT
75 pF
11
-52
9.0
No Degradation in Output
Power
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
dB
dBc