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NPN SILICON RF POWER TRANSISTOR
TVU025
The ASI TVU 025 is Designed for
FEATURES:
• Input Matching Network
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CEO
V
EBO
P
DISS
TJ
T
STG
θθJC
135 W @ TC = 25 OC
-50 OC to +200 OC
-50 OC to +150 OC
8.0 A
45 V
30 V
3.0 V
1.3 OC/W
PACKAGE STYLE .450 BAL FLG(A)
DIM
.060x45°
C
E
D
F
K
MINIMUM
inches / mm
A
B
C
D
E
F
G
H
J
K
L
M
N
P
.120 / 3.05
.455 / 11.56
.120 / 3.05 .130 / 3.30
.838 / 21.28 .850 / 21.59
1.095 / 27.81
.525 / 13.34 .535 / 13.59
.002 / 0.05
.055 / 1.40 .065 / 1.65
.080 . 2.03
.445 / 11.30
B
G
J
.055 / 1.40
.230 / 5.84
FULL R
A
H
.100x45°
P
M
L
MAXIMUM
inches / mm
.130 / 3.30
.785 / 19.94
.465 / 11.81
1.105 / 28.07
.005 / 0.15
.095 / 2.41
.195 / 4.95
.455 / 11.56
N
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 50 mA 45 V
CBO
BV
IC = 200 mA 30 V
CEO
BV
IE = 10 mA 3.0 V
EBO
I
VCE = 25 V 5.0 mA
CEO
hFE VCE = 5.0 V IC = 3.0 A 10 80 ---
COB VCB = 28 V f = 1.0 MHz 70 pF
PG
IMD1
VCE = 25 V IC = 3.2 A f = 860 MHz
P
= 25 W
OUT
8.0
-45
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
dB
dBc