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NPN SILICON RF POWER TRANSISTOR
HF5-12F
The ASI HF5-12F is Designed for
FEATURES:
• PG = 20 dB min. at 5 W/30 MHz
• IMD3 = -30 dBc max. at 5.0 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
V
V
V
P
T
I
C
CBO
CEO
EBO
DISS
T
STG
θθ
JC
80 W @ TC = 25 OC
J
-65 OC to +200 OC
-65 OC to +150 OC
4.5 A
36 V
18 V
4.0 V
2.2 OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
DIM
B
E
B
F
MINIMUM
A
B
C
D
E
F
G
H
I
J
.220 / 5.59 .230 / 5.84
.785 / 19.94
.720 / 18.29 .730 / 18.54
.970 / 24.64
.004 / 0.10 .006 / 0.15
.160 / 4.06 .180 / 4.57
.240 / 6.10 .255 / 6.48
D
inches / mm
A
Ø.125 NOM.
FULL R
J
.125
E
C
E
I
H
G
MAXIMUM
inches / mm
.980 / 24.89
.385 / 9.78
.105 / 2.67.085 / 2.16
.280 / 7.11
CHARACTERISTICS T
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
C
ob
G
P
IMD
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
= 25 OC
C
IC = 50 mA 36 V
IC = 50 mA 18 V
IC = 50 mA 36 V
IE = 5.0 mA 4.0 V
VCE = 15 V 5.0 mA
VCE = 5.0 V IC = 1.0 A 10 200 ---
VCB = 12.5 V f = 1.0 MHz 100 pF
VCC = 12.5 V ICQ = 25 mA f = 30 MHz
3
P
= 5.0 Watts (PEP)
OUT
15 18
Specifications are subject to change without notice.
-30
dB
dBc