Specifications are subject to change without notice.
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NPN SILICON RF POWER TRANSISTOR
The ASI FMB175 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 20 A
V
CBO
V
36 V
CEO
V
65 V
CES
V
4.0 V
EBO
P
DISS
270 W @ TC = 25 OC
TJ -65 OC to +200 OC
T
-65 OC to +150 OC
STG
θθJC 0.7 OC/W
65 V
FMB175
PACKAGE STYLE .500 6L FLG
D
G
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
MINIMUM
inches / mm
.150 / 3.43 .160 / 4.06
.210 / 5.33
.835 / 21.21 .865 / 21.97
.490 / 12.45
.003 / 0.08
.970 / 24.64 .980 / 24.89
.090 / 2.29 .105 / 2.67
.150 / 3.81
.120 / 3.05 .135 / 3.43
C
B
H
A
.725/18,42
F
I
J
.045 / 1.14
.125 / 3.18
.725 / 18.42
E
2x ØN
FULL R
K
L
MAXIMUM
inches / mm
.220 / 5.59
.210 / 5.33.200 / 5.08
.510 / 12.95
.007 / 0.18
.170 / 4.32
.285 / 7.24
M
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 100 mA 65 V
CBO
BV
IC = 100 mA 65 V
CES
BV
IC = 100 mA 35 V
CEO
BV
IE = 10 mA 4.0 V
EBO
I
VCE = 28 V 15 mA
CES
hFE VCE = 5.0 V IC = 5.0 A 20 200 ---
COB VCB = 28 V f = 1.0 MHz
PG
ηηC
VCC = 28 V P
OUT
= 175 W f = 108 MHz
200 pF
10
65
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
dB
%