ADVANCED SEMICONDUCTOR FMB150 Service Manual

DESCRIPTION:

ORDER CODE: ASI10588

查询ASI10588供应商

NPN SILICON RF POWER TRANSISTOR

FMB150

The ASI FMB150 is Designed for

FEATURES:

•

•

• Omnigold™ Metalization System

MAXIMUM RATINGS

IC 16 A

V

CBO

V

25 V

CEO

V

60 V

CES

V

4.0 V

EBO

P

DISS

230 W @ TC = 25 OC

TJ -65 OC to +200 OC

T

-65 OC to +150 OC

STG

θθJC 1.1 OC/W

60 V

PACKAGE STYLE .500 4L FLG

.112x45°

L

D

F

G

.125 / 3.18

.125 / 3.18

Ø.125 NOM.

K

J

I

MAXIMUM

inches / mm

.230 / 5.84

.255 / 6.48

.7.30 / 18.54

.980 / 24.89

.110 / 2.79
.175 / 4.45
.280 / 7.11

1.050 / 26.67

DIM

A

FULL R

C

B

E

H

MINIMUM

inches / mm

A
B
C
D
E
F
G
H
I
J
K
L

.220 / 5.59

.245 / 6.22

.720 / 18.28

.970 / 24.64
.495 / 12.57 .505 / 12.83

.003 / 0.08 .007 / 0.18
.090 / 2.29
.150 / 3.81

.980 / 24.89

CHARACTERISTICS T

= 25 OC

C

SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS

BV

IC = 100 mA 60 V

CBO

BV

IC = 100 mA RBE = 10 Ω 55 V

CER

BV

IC = 100 mA 25 V

CEO

BV

IE = 20 mA 4.0 V

EBO

hFE VCE = 5.0 V IC = 1.0 A 20 150 ---

COB VCB = 28 V f = 1.0 MHz

PG

VCC = 28 V P

= 150 W f = 108 MHz

OUT

ηηC

140 pF

9.0
65

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • [phone] • FAX [phone] 1/1

Specifications are subject to change without notice.

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