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NPN SILICON RF POWER TRANSISTOR
CBSL6
The ASI CBSL6 is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
V
CBO
V
CES
V
EBO
P
DISS
TJ
T
STG
θθJC
53 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.4 A
50 V
35 V
3.5 V
3.3 OC/W
PACKAGE STYLE .230 6L FLG
.430
DIM
A
B
C
D
E
F
G
H
I
J
K
L
.040x45°
4X .025 R
.115
D
E
.125
I
MINIMUM
inches / mm
.355 / 9.02 .365 / 9.27
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06 .180 / 4.57
.230 / 5.84
A
B
C
F
G
H
2XØ.130
J
MAXIMUM
inches / mm
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89.970 / 24.64
.365 / 9.27
.006 / 0.15
.130 / 3.30
.260 / 6.60
L
K
CHARACTERISTICS T
= 25 OC
C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
IC = 5 mA 24 V
CEO
BV
IC = 5 mA 50 V
CBO
BV
IE = 5 mA 3.5 V
EBO
I
VCE = 24 V 1.0 mA
CEO
I
VCB = 24 V 1.0 mA
CBO
hFE VCE = 10 V IC = 0.1 A 20 100 ---
COB VCB = 24 V f = 1.0 MHz
PG
ηηC
VCC = 24 V ICQ = 25 mA f = 960 MHz
P
= 6.0 W
OUT
8.5 pF
10
50
---
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
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