ADVANCED SEMICONDUCTOR BCW 65, BCW 66 Service Manual

查询BCW65B供应商

BCW 65, BCW 66 General Purpose Transistors

NPN

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

Surface mount Si-Epitaxial PlanarTransistors

Power dissipation – Verlustleistung 250 mW

±0.1

2.9

0.4

3

Typ e

Code

1

Dimensions / Maße in mm
1 = B 2 = E 3 = C

2

1.9

Maximum ratings (T

1.1

max

2.5

±0.1

1.3

= 25/C) Grenzwerte (TA = 25/C)

A

Plastic case SOT-23
Kunststoffgehäuse (TO-236)

Weight approx. – Gewicht ca. 0.01 g

Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle

Collector-Emitter-voltage B open V

Collector-Base-voltage E open V

Emitter-Base-voltage C open V

Power dissipation – Verlustleistung P

Collector current – Kollektorstrom (DC) I

Peak Collector current – Kollektor-Spitzenstrom I

Base current – Basis-Spitzenstrom I

Peak Base current – Basis-Spitzenstrom I

Junction temperature – Sperrschichttemperatur T

Storage temperature – Lagerungstemperatur T

tot

C

CM

B

BM

j

S

CE0

CB0

EB0

NPN

BCW 65 BCW 66

32 V 45 V

60 V 75 V

5 V

250 mW 1)

800 mA

1000 mA

100 mA

200 mA

150/C

- 65…+ 150/C

Characteristics (T

= 25/C) Kennwerte (Tj = 25/C)

j

Collector-Base cutoff current – Kollektorreststrom

I

= 0, VCB = 32 V

E

BCW 65

IE = 0, VCB = 32 V, Tj = 150/CI

= 0, VCB = 45 V

I

E

BCW 66

IE = 0, VCB = 45 V, Tj = 150/CI

I

I

CB0

CB0

CB0

CB0

Emitter-Base cutoff current – Emitterreststrom

IC = 0, VEB = 4 V I

1

) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2

Kupferbelag (Lötpad) an jedem Anschluß

EB0

42

Min. Typ. Max.

– – 20 nA

– – 20 :A

– – 20 nA

– – 20 :A

– – 20 nA

01.11.2003

General Purpose Transistors BCW 65, BCW 66

Characteristics (T

= 25/C) Kennwerte (Tj = 25/C)

j

Collector saturation volt. – Kollektor-Sättigungsspg.

I

= 100 mA, IB = 10 mA V

C

= 500 mA, IB = 50 mA V

I

C

Base saturation voltage – Basis-Sättigungsspannung

= 100 mA, IB = 10 mA V

I

C

I

= 500 mA, IB = 50 mA V

C

DC current gain – Kollektor-Basis-Stromverhältnis

BCW 65A / 66F h

VCE = 10 V, IC = 100 :A

BCW 65B / 66G h

BCW 65C / 66H h

BCW 65A / 66F h

= 1 V, IC = 10 mA

V

CE

BCW 65B / 66G h

BCW 65C / 66H h

BCW 65A / 66F h

VCE = 1 V, IC = 100 mA

BCW 65B / 66G h

BCW 65C / 66H h

BCW 65A / 66F h

VCE = 2 V, IC = 500 mA

BCW 65B / 66G h

BCW 65C / 66H h

Gain-Bandwidth Product – Transitfrequenz

1

CEsat

CEsat

1

BEsat

BEsat

1

)

FE

FE

FE

FE

FE

FE

FE

FE

FE

FE

FE

FE

Min. Typ. Max.

)

– – 300 mV

– – 700 mV

)

– – 1.25 V

– – 2 V

35 – –

50 – –

80 – –

75 – –

110 – –

180 – –

100 160 250

160 250 400

250 350 630

–35–

–60–

– 100 –

= 5 V, IC = 50 mA, f = 100 MHz f

V

CE

T

– 170 MHz –

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz C

CB0

– 6 pF –

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz C

Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren

EB0

– 60 pF –

R

thA

420 K/W 2)

BCW 67, BCW 68

BCW 65A = EA BCW 65B = EB BCW 65C = EC

Marking – Stempelung

BCW 66F = EF BCW 66G = EG BCW 66H = EH

1

) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2

) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

01.11.2003

2

Kupferbelag (Lötpad) an jedem Anschluß

43