ADVANCED SEMICONDUCTOR BCW 60 Service Manual
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BCW 60 General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Surface mount Si-Epitaxial PlanarTransistors
Power dissipation – Verlustleistung 250 mW
±0.1
2.9
0.4
3
Typ e
Code
1
Dimensions / Maße in mm
1 = B 2 = E 3 = C
2
1.9
Maximum ratings (T
1.1
max
2.5
±0.1
1.3
= 25/C) Grenzwerte (TA = 25/C)
A
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Collector-Emitter-voltage B open V
Collector-Base-voltage E open V
Emitter-Base-voltage C open V
Power dissipation – Verlustleistung P
Collector current – Kollektorstrom (DC) I
Peak Collector current – Kollektor-Spitzenstrom I
Peak Base current – Basis-Spitzenstrom I
Junction temperature – Sperrschichttemperatur T
Storage temperature – Lagerungstemperatur T
tot
C
CM
BM
j
S
CE0
CB0
EB0
NPN
BCW 60
32 V
32 V
5 V
250 mW 1)
100 mA
200 mA
200 mA
150/C
- 65…+ 150/C
Characteristics (T
= 25/C) Kennwerte (Tj = 25/C)
j
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
I
= 0, VCB = 32 V I
E
IE = 0, VCB = 32 V, Tj = 150/CI
CB0
CB0
– – 20 nA
– – 20 :A
Emitter-Base cutoff current – Emitterreststrom
I
= 0, VEB = 4 V I
C
Collector saturation volt. – Kollektor-Sättigungsspg.
IC = 10 mA, IB = 0.25 mA V
IC = 50 mA, IB = 1.25 mA V
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2
Kupferbelag (Lötpad) an jedem Anschluß
EB0
2
)
CEsat
CEsat
38
– – 20 nA
50 mV 350 mV
100 mV 550 mV
01.11.2003
General Purpose Transistors BCW 60
Characteristics (T
= 25/C) Kennwerte (Tj = 25/C)
j
Base saturation voltage – Basis-Sättigungsspannung
I
= 10 mA, IB = 0.25 mA V
C
= 50 mA, IB = 1.25 mA V
I
C
DC current gain – Kollektor-Basis-Stromverhältnis
BCW 60B h
VCE = 5 V, IC = 10 :A
BCW 60C h
BCW 60D h
BCW 60B h
VCE = 5 V, IC = 2 mA
BCW 60C h
BCW 60D h
BCW 60B h
= 1 V, IC = 50 mA
V
CE
BCW 60C h
BCW 60D h
Base-Emitter voltage – Basis-Emitter-Spannung 1)
1
BEsat
BEsat
1
)
FE
FE
FE
FE
FE
FE
FE
FE
FE
Min. Typ. Max.
)
600 mV – 850 mV
700 mV – 1050 mV
20 – –
40 – –
100 – –
180 – 310
250 – 460
380 – 630
70 – –
90 – –
100 – –
VCE = 5 V, IC = 10 :AV
VCE = 5 V, IC = 2 mA V
VCE = 1 V, IC = 50 mA V
BEon
BEon
BEon
– 520 mV –
550 mV 650 mV 700 mV
– 780 mV –
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz f
T
100 MHz 250 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
= 10 V, IE = ie = 0, f = 1 MHz C
V
CB
CB0
– 1.7 pF –
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz C
EB0
– 11 pF –
Noise figure – Rauschzahl
VCE = 5 V, IC = 200 :A, RG = 2 kS,
f = 1 kHz,
)f = 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
F – 2 dB 6 dB
R
thA
BCW 61 series
420 K/W 2)
Marking – Stempelung BCW 60B = AB BCW 60C = AC BCW 60D = AD
1
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
01.11.2003
2
Kupferbelag (Lötpad) an jedem Anschluß
39
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