ADVANCED SEMICONDUCTOR BCV27, BCV47 Service Manual
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BCV27, BCV47 Darlington Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung 250 mW
±0.1
2.9
0.4
3
Type
Code
1
Dimensions / Maße in mm
1 = B1 2 = E2 3 = C
2
1.9
Maximum ratings (T
1.1
max
2.5
±0.1
1.3
= 25/C) Grenzwerte (TA = 25/C)
A
Collector-Emitter-voltage V
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
= 0 V
BE
Collector-Base-voltage E open V
Emitter-Base-voltage C open V
Power dissipation – Verlustleistung P
Collector current – Kollektorstrom (dc) I
C
CES
CB0
EB0
tot
BCV27 BCV47
30 V 60 V
40 V 80 V
10 V
250 mW 1)
500 mA
Peak Collector current – Kollektor-Spitzenstrom I
Base current – Basisstrom (dc) I
Junction temperature – Sperrschichttemperatur T
Storage temperature – Lagerungstemperatur T
Characteristics (T
= 25/C) Kennwerte (Tj = 25/C)
j
Collector-Base cutoff current – Kollektorreststrom
I
= 0, VCB = 30 V
E
I
= 0, VCB = 60 V
E
BCV27
BCV47
I
I
CB0
CB0
Emitter-Base cutoff current – Emitterreststrom
I
= 0, VEB = 10 V I
C
EB0
Collector saturation volt. – Kollektor-Sättigungsspg.
I
= 100 mA, IB = 0.1 mA V
C
CM
B
j
S
2
)
CEsat
800 mA
100 mA
150/C
- 65…+ 150/C
Min. Typ. Max.
–
–
–
–
100 nA
100 nA
– – 100 nA
– – 1 V
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2
Kupferbelag (Lötpad) an jedem Anschluß
8
Darlington Transistors BCV27, BCV47
Characteristics (T
= 25/C) Kennwerte (Tj = 25/C)
j
Base saturation voltage – Basis-Sättigungsspannung
I
= 100 mA, IB = 0.1 mA V
C
DC current gain – Kollektor-Basis-Stromverhältnis
= 5 V, IC = 1 mA
V
CE
V
= 5 V, IC = 10 mA
CE
VCE = 5 V, IC = 100 mA
BCV27
BCV47
BCV27
BCV47
BCV27
BCV47
Base-Emitter voltage – Basis-Emitter-Spannung
V
= 5 V, IC = 10 mA - V
CE
h
h
h
h
h
h
1
)
Gain-Bandwidth Product – Transitfrequenz
V
= 5 V, IC = 10 mA, f = 100 MHz f
CE
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
1
FE
FE
FE
FE
FE
FE
T
1
)
BEsat
)
BEon
Min. Typ. Max.
– – 1.5 V
4000
2000
10000
4000
20000
10000
–
–
–
–
–
–
–
–
–
–
–
–
– – 1.4 V
– 220 MHz –
R
thA
420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCV26, BCV46
Marking – Stempelung BCV27 = FF BCV47 = FG
Pinning – Anschlußbelegung
T1
1
3
T2
2
1
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
9
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