ADVANCED SEMICONDUCTOR BC 817, BC 818 Service Manual
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BC 817 / BC 818 General Purpose Transistors
NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Surface mount Si-Epitaxial PlanarTransistors
Power dissipation – Verlustleistung 310 mW
±0.1
2.9
0.4
3
Typ e
Code
1
Dimensions / Maße in mm
1 = B 2 = E 3 = C
2
1.9
Maximum ratings (T
1.1
max
2.5
±0.1
1.3
= 25/C) Grenzwerte (TA = 25/C)
A
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Collector-Emitter-voltage B open V
CE0
NPN
BC 817 BC 818
45 V 25 V
Collector-Emitter-voltage B shorted V
Collector-Base-voltage E open V
Emitter-Base-voltage C open V
Power dissipation – Verlustleistung P
Collector current – Kollektorstrom (DC) I
Peak Coll. current – Kollektor-Spitzenstrom I
Peak Base current – Basis-Spitzenstrom I
Peak Emitter current – Emitter-Spitzenstrom - I
Junction temperature – Sperrschichttemperatur T
Storage temperature – Lagerungstemperatur T
Characteristics, T
= 25/C Kennwerte, Tj = 25/C
j
DC current gain – Kollektor-Basis-Stromverhältnis
V
= 1 V, IC = 100 mA
CE
V
= 1 V, IC = 500 mA h
CE
BC817
BC818
h
tot
C
CM
BM
j
S
FE
FE
CES
CB0
EB0
EM
50 V 30 V
50 V 30 V
5 V
310 mW 1)
800 mA
1000 mA
200 mA
1000 mA
150/C
- 65…+ 150/C
Min. Typ. Max.
100 – 600
40 – –
Group -16 h
= 1 V, IC = 100 mA
V
CE
Group -25 h
Group -40 h
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluß
6
FE
FE
FE
100 160 250
160 250 400
250 400 600
01.11.2003
General Purpose Transistors BC 817 / BC 818
Characteristics, T
= 25/C Kennwerte, Tj = 25/C
j
Collector saturation voltage – Kollektor-Sättigungsspg.
I
= 500 mA, IB = 50 mA V
C
CEsat
Base saturation voltage – Basis-Sättigungsspannung
I
= 500 mA, IB = 50 mA V
C
BEsat
Base-Emitter voltage – Basis-Emitter-Spannung
V
= 1 V, - IC = 500 mA V
CE
BE
Collector-Base cutoff current – Kollektorreststrom
I
= 0, VCB = 20 V I
E
I
= 0, VCB = 20 V, Tj = 150/CI
E
CB0
CB0
Emitter-Base cutoff current – Emitterreststrom
I
= 0, VEB = 4 V I
C
EB0
Gain-Bandwidth Product – Transitfrequenz
V
= 5 V, IC = 10 mA, f = 50 MHz f
CE
T
Min. Typ. Max.
– – 0.7 V
– – 1.3 V
– – 1.2 V
– – 100 nA
––5 :A
– – 100 nA
– 100 MHz –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
= 10 V, IE = ie = 0, f = 1 MHz C
CB
CB0
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC 817-16 = 6A BC 817-25 = 6B BC 817-40 = 6C
Marking of available current gain
groups per type
Stempelung der lieferbaren Strom-
BC 817 = 6D
BC 818-16 = 6E BC 818-25 = 6F BC 818-40 = 6G
verstärkungsgruppen pro Typ
BC 818 = 6H
– 12 pF –
R
thA
320 K/W 1)
BC 807 / BC 808
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
01.11.2003
2
Kupferbelag (Lötpad) an jedem Anschluß
7
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