ADVANCED SEMICONDUCTOR BC 337, BC 338 Service Manual
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BC 337 / BC 338 General Purpose Transistors
NPN Si-Epitaxial PlanarTransistors NPN
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E
Maximum ratings (T
= 25/C) Grenzwerte (TA = 25/C)
A
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Collector-Emitter-voltage B open V
Collector-Base-voltage E open V
Emitter-Base-voltage C open V
Power dissipation – Verlustleistung P
Collector current – Kollektorstrom (DC) I
Junction temp. – Sperrschichttemperatur T
Storage temperature – Lagerungstemperatur T
Characteristics (T
= 25/C) Kennwerte (Tj = 25/C)
j
C
CE0
CB0
EB0
tot
j
S
BC 337 BC 338
45 V 25 V
50 V 30 V
5 V
625 mW 1)
800 mA
150/C
- 55…+ 150/C
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
100 160 250
160 250 400
250 400 630
V
= 1 V, IC = 100 mA
CE
Group -16 h
Group -25 h
Group -40 h
FE
FE
FE
Collector-Emitter cutoff current – Kollektorreststrom
V
= 40 V BC 337 I
CE
V
= 20 V BC 338 I
CE
V
= 40 V, Tj = 125/C BC 337 I
CE
V
= 20 V, Tj = 125/C BC 338 I
CE
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
CES
CES
CES
CES
– – 200 nA
– – 200 nA
– – 10 :A
– – 10 :A
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01.11.2003
General Purpose Transistors BC 337 / BC 338
Characteristics (T
= 25/C) Kennwerte (Tj = 25/C)
j
Min. Typ. Max.
Collector-Emitter breakdown voltage
Collector-Emitter Durchbruchspannung
I
= 10 mA
C
= 0.1 mA
I
C
BC 337 V
BC 338 V
BC 337 V
BC 338 V
(BR)CES
(BR)CES
(BR)CES
(BR)CES
40 V – –
20 V – –
50 V – –
30 V – –
Emitter-Base breakdown voltage
Emitter-Basis-Durchbruchspannung
I
= 10 :AV
E
(BR)EB0
5 V – –
Collector saturation volt. – Kollektor-Sättigungsspannung
I
= 500 mA, IB = 50 mA V
C
CEsat
– – 0.7 V
Base-Emitter voltage – Basis-Emitter-Spannung
V
= 1 V, IC = 300 mA V
CE
BE
– – 1.2 V
Gain-Bandwidth Product – Transitfrequenz
V
= 5 V, IC = 10 mA, f = 50 MHz f
CE
Collector-Base Cap. – Kollektor-Basis-Kap.
V
= 10 V, f = 1 MHz C
CB
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Available current gain groups per type
Lieferbare Stromverstärkungsgruppen pro Typ
T
CB0
R
BC 337-16
BC 338-16
– 100 MHz –
– 12 pF –
thA
200 K/W 1)
BC 327 / BC 328
BC 337-25
BC 338-25
BC337-40
BC338-40
1
) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
01.11.2003
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