D
ARF449A
G
S
TO-247
ARF449B
Common
Source
RF POWER MOSFETs
N-CHANNEL ENHANCEMENT MODE 150V 150W 120MHz
The ARF449A and ARF449B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
• Specified 150 Volt, 81.36 MHz Characteristics:
• Output Power = 150 Watts.
• Gain = 13dB (Class C)
• Efficiency = 75%
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
Parameter
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
ARF449A/449B
UNIT
V
V
V
R
TJ,T
DSS
DGO
I
P
θJC
T
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
D
Gate-Source Voltage
GS
Total Power Dissipation @ TC = 25°C
D
Junction to Case
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
VDS(ON)
I
DSS
I
GSS
g
VGS(TH)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Forward Transconductance (VDS = 25V, ID = 5A)
fs
Gate Threshold Voltage (V
1
(ID(ON) = 5A, VGS = 10V)
= VGS, ID = 50mA)
DS
= 0V, ID = 250 µA)
GS
= V
DS
= 0.8 V
DS
, VGS = 0V)
DSS
DSS
DS
, VGS = 0V, TC = 125°C)
= 0V)
450
450
Volts
9
±30
165
0.76
Amps
Volts
Watts
°C/W
-55 to 150
300
°C
MIN TYP MAX
UNIT
450
4
Volts
25
250
µA
±100
3 5.8
25
nA
mhos
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)557 92 15 15 FAX: (33) 5 56 47 97 61
050-4909 Rev B
DYNAMIC CHARACTERISTICS ARF449A/449B
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
= 0V
GS
VDS = 150V
f = 1 MHz
VGS = 15V
VDD = 0.5 V
ID = I
D[Cont.]
@ 25°C
RG = 1.6Ω
DSS
FUNCTIONAL CHARACTERISTICS
Symbol
G
η
ψ
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
PS
Characteristic
Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1
Test Conditions
f = 81.36 MHz
= 0V VDD = 150V
V
GS
= 150W
P
out
MIN TYP MAX
UNIT
980 1200
87 120
pF
25 40
510
3.1 7
ns
15 25
37
MIN TYP MAX
12 13
70 75
UNIT
dB
%
No Degradation in Output Power
GAIN (dB)
, DRAIN CURRENT (AMPERES)
I
050-4909 Rev B
30
25
20
15
10
5
0
30 45 60 75 90 105 120
16
VDS> ID (ON) x RDS (ON)MAX.
12
8
4
D
0
02468
V
GS
Figure 3, Typical Transfer Characteristics
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
TJ = -55°C
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C
, GATE-TO-SOURCE VOLTAGE (VOLTS)
Class C
= 150V
V
DD
P
= 150W
out
TJ = -55°C
3000
C
1000
500
100
CAPACITANCE (pf)
50
10
1 5 10 50 150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
50
OPERATION HERE
LIMITED BY RDS (ON)
10
5
1
.5
, DRAIN CURRENT (AMPERES)
D
I
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1 5 10 50 100 500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
iss
C
oss
C
rss
10µS
100µS
1mS
10mS
100mS
DC