Advanced Power Technology APT ARF448B, ARF448A Datasheet

D

ARF448A

G

S

TO-247

ARF448B

Common
Source

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE 150V 250W 65MHz

The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push­pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

• Specified 150 Volt, 40.68 MHz Characteristics:

• Output Power = 250 Watts.

• Gain = 15dB (Class C)

• Efficiency = 75%

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

• Low Cost Common Source RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF448A/448B

UNIT

V

V

V

R

TJ,T

DSS

DGO

I

P

θJC

T

Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C

D

Gate-Source Voltage

GS

Total Power Dissipation @ TC = 25°C

D

Junction to Case
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VDS(ON)

I

DSS

I

GSS

g

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Forward Transconductance (VDS = 25V, ID = 7.5A)

fs

Gate Threshold Voltage (V

1

(ID(ON) = 7.5A, VGS = 10V)

= VGS, ID = 50mA)

DS

= 0V, ID = 250 µA)

GS

= V

DS

= 0.8 V

DS

, VGS = 0V)

DSS

DSS

DS

, VGS = 0V, TC = 125°C)

= 0V)

450
450

Volts

15
±30
230

0.55

Amps

Volts

Watts

°C/W

-55 to 150
300

°C

MIN TYP MAX

UNIT

450

3

Volts

25

250

µA

±100

5 8.5
25

nA
mhos
Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-4908 Rev B

DYNAMIC CHARACTERISTICS ARF448A/448B

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

VDS = 150V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

@ 25°C

RG = 1.6Ω

DSS

FUNCTIONAL CHARACTERISTICS

Symbol

G

PS

η

ψ

1

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1

Test Conditions

f = 40.68 MHz

= 0V VDD = 150V

V

GS

= 250W

P

out

MIN TYP MAX

UNIT

1400 1700

150 200

pF

65 100

715
510

ns

23 40
12 25

MIN TYP MAX

13 15
70 75

UNIT

dB

%

No Degradation in Output Power

GAIN (dB)

, DRAIN CURRENT (AMPERES)
I

050-4908 Rev B

30

Class C

= 150V

V

25

20

15

10

5

0

10 20 30 40 50 60 65

25

VDS> ID (ON) x RDS (ON)MAX.

20

15

10

5

D

0

02468

V

GS

Figure 3, Typical Transfer Characteristics

FREQUENCY (MHz)

Figure 1, Typical Gain vs Frequency

TJ = -55°C

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

TJ = +125°C

TJ = +25°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

DD

P

= 250W

out

TJ = -55°C

3000

C

iss

1000

500

CAPACITANCE (pf)

100

50

1 5 10 50 150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

70

OPERATION HERE

LIMITED BY RDS (ON)

10

5

1

.5

, DRAIN CURRENT (AMPERES)

D

I

TC =+25°C
TJ =+150°C
SINGLE PULSE

.1

1 5 10 50 100 500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 4, Typical Maximum Safe Operating Area

C

oss

C

rss

10µS
100µS

1mS

10mS

100mS
DC