Advanced Power Technology APT ARF447, ARF446 Datasheet

D

ARF446

G

S

TO-247

ARF447

Common
Source

RF POWER MOSFETs

N-CHANNEL ENHANCEMENT MODE 250V 250W 65MHz

The ARF446 and ARF447 comprise a symmetric pair of common source RF power transistors designed for push-pull
scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz.

• Specified 250 Volt, 40.68 MHz Characteristics:

• Output Power = 250 Watts.

• Gain = 15dB (Class C)

• Efficiency = 75%

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

• Low Cost Common Source RF Package.

• Very High Breakdown for Improved Ruggedness.

• Low Thermal Resistance.

• Nitride Passivated Die for Improved Reliability.

ARF446/447

UNIT

V

V

V

R

TJ,T

DSS

DGO

I

P

θJC

T

Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C

D

Gate-Source Voltage

GS

Total Power Dissipation @ TC = 25°C

D

Junction to Case
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

VDS(ON)

I

DSS

I

GSS

g

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Forward Transconductance (VDS = 25V, ID = 3.5A)

fs

Gate Threshold Voltage (V

1

(ID(ON) = 3.5A, VGS = 10V)

= VGS, ID = 50mA)

DS

= 0V, ID = 250 µA)

GS

= V

DS

= 0.8 V

DS

, VGS = 0V)

DSS

DSS

DS

, VGS = 0V, TC = 125°C)
= 0V)

900
900

Volts

6.5
±30
230

0.55

Amps

Volts

Watts

°C/W

-55 to 150
300

°C

MIN TYP MAX

UNIT

900

7

Volts

25

250

µA

±100

4 5.7
25

nA
mhos
Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-4907 Rev C

DYNAMIC CHARACTERISTICS ARF446/447

Symbol

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

= 0V

GS

VDS = 300V

f = 1 MHz

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

@ 25°C

RG = 1.6Ω

DSS

FUNCTIONAL CHARACTERISTICS

Symbol

G

η

ψ

G

η
ψ

1

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

PS

PS

GAIN (dB)

Characteristic

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1

Common Source Amplifier Power Gain
Drain Efficiency
Electrical Ruggedness VSWR 20:1

30

25

20

15

10

Class C

V

DD

P

out

= 250V

= 250W

Test Conditions

f = 27.12 MHz

= 0V VDD = 300V

V

GS

= 250W

P

out

f = 40.68 MHz

= 0V VDD = 250V

V

GS

= 250W

P

out

3000

1000

500

100

CAPACITANCE (pf)

50

MIN TYP MAX

UNIT

1500 1800

70 130

pF

27 50

715
510

ns

23 40
12 25

MIN TYP MAX

20
80

UNIT

dB

%

No Degradation in Output Power

13 15
70 75

dB

%

No Degradation in Output Power

C

iss

C

oss

C

rss

, DRAIN CURRENT (AMPERES)
I

050-4907 Rev C

5

0

10 20 30 40 50 60 65

16

VDS> ID (ON) x RDS (ON)MAX.

12

8

4

D

0

02468

V

GS

Figure 3, Typical Transfer Characteristics

FREQUENCY (MHz)

Figure 1, Typical Gain vs Frequency

TJ = -55°C

250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE

TJ = +125°C

TJ = +25°C

, GATE-TO-SOURCE VOLTAGE (VOLTS)

TJ = -55°C

10

1 5 10 50 100 300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

Figure 2, Typical Capacitance vs. Drain-to-Source Voltage

30

OPERATION HERE

10

.5

, DRAIN CURRENT (AMPERES)

D

I

.1

Figure 4, Typical Maximum Safe Operating Area

LIMITED BY RDS (ON)

5

1

TC =+25°C
TJ =+150°C
SINGLE PULSE

1 5 10 50 100 1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

10µS
100µS

1mS

10mS

100mS
DC