Advanced Power Technology APT ARF445, ARF444 Datasheet
D
TO-247
G
S
RF OPERATION 1-15MHz
()
N-CH ANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF444 and ARF445 comprise a symmetric pair of RF power transistors designed for push-pull scientific,
commercial, medical and industrial RF power amplifier applications.
• Specified 300 Volt, 13.56 MHz Characteristics:
• Output Power = 300 Watts.
• Gain = 18.7dB (Typ.)
• Efficiency = 83% (Typ.)
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
V
DGO
I
V
P
R
TJ,T
T
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
D
Gate-Source Voltage
GS
Total Power Dissipation @ TC = 25°C
D
Junction to Case
θJC
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
= 25°C
C
ARF445 300W 300V 13.56MHz
THE ARF444 PIN-OUTS ARE MIRROR IMAGE OF THE ARF445.
POWER MOS IV
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
ARF444/445
900
900
6.5
±30
208
0.60
-55 to 150
300
®
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
ARF444 300W 300V 13.56MHz
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
VDS(ON)
I
DSS
I
GSS
g
VGS(TH)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)557 92 15 15 FAX: (33) 556 47 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (VDS = 25V, ID = 3.5A)
fs
Gate Threshold Voltage (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1
(ID(ON) = 3.5A, VGS = 10V)
= VGS, ID = 50mA)
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250 µA)
GS
= V
DS
DSS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
900
250
1000
±100
4 5.7
25
UNIT
Volts
7
µA
nA
mhos
Volts
050-4906 Rev D
DYNAMIC CHARACTERISTICS
ARF444/445
Symbol
C
C
C
Characteristic
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Test Conditions
V
= 0V
GS
VDS = 300V
f = 1 MHz
FUNCTIONAL CHARACTERISTICS
Symbol
G
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Common Source Amplifier Power Gain
PS
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 30:1
Test Conditions
= 300V
V
DD
VGS = 0V
P
= 300W
out
f = 13.56MHz
TYPICAL 13.56 MHz, 1000 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT
Circuit Characteristics
= 1000W
P
out
Gain = 16.5dB
Efficiency = 80%
R1-R4
Q1
L1
J1
RF INPUT
R5-R8
MIN TYP MAX
UNIT
1500 1800
90 130
pF
28 50
MIN TYP MAX
17 18.7
83
UNIT
dB
%
No Degradation in Output Power
J2
RF OUTPUT
Q2
BFC1
T1
C1
R9-R12
T2
Q3
L2
RFC1
R13-R16
Q4
Parts List
R1-R16 = 4.7Ω 1W C1 = 200pF Chip Capacitor
C2-C6 = 0.1µF Disk Ceramic C7, C8 = 0.01 Disk Ceramic
Q1, Q3 = ARF444 Q2, Q4 = ARF445
L1, L2 = 0.37µH: 6T, #18AWG, ID=0.438
RFC1 = 2T, #14 PTFE coated twisted pair on a Fair-Rite #2643665702 shield bead, µi=850
T1 = 9:1 (Z) conventional transformer; 3:1 (T), #18 stranded PTFE coated wire on two Fair-Rite #2643540002, µi=850
T2 = 1:1 (Z) conventional transformer; 2:2 (T), #14 stranded PTFE coated wire on two stacks of three
Fair-Rite #2643102002 shielded bead, µi=850
BFC1 = 6T, #18 Twisted pair stranded PTFE coated wire on three stacked Indiana General Toroid #F624-19-Q1 µi=125
050-4906 Rev D
C2 C3 C4 C5
C6
J3
300VDC
C7
C8
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