Advanced Power Technology APT ARF443, ARF442 Datasheet
D
G
TO-247
ARF442 200W 100V 13.56MHz
S
RF OPERATION 1-15MHz
()
N-CH ANNEL ENHANCEMENT MODE RF POWER MOSFET
The ARF442 and ARF443 comprise a symmetric pair of RF power transistors designed for narrow-band push-pull
commercial, medical and industrial RF power amplifier applications.
• Specified 100 Volt, 13.56 MHz Characteristics:
• Output Power = 200 Watts.
• Gain = 22dB (Typ.)
• Efficiency = 73% (Typ.)
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
DSS
V
DGO
I
V
P
R
TJ,T
T
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
D
Gate-Source Voltage
GS
Total Power Dissipation @ TC = 25°C
D
Junction to Case
θJC
Operating and Storage Junction Temperature Range
STG
Lead Temperature: 0.063" from Case for 10 Sec.
L
= 25°C
C
ARF443 200W 100V 13.56MHz
THE ARF442 PIN-OUTS ARE MIRROR IMAGE OF THE ARF443.
POWER MOS IV
• Low Cost Common Source RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
ARF442/443
300
300
8
±30
167
0.75
-55 to 150
300
®
UNIT
Volts
Amps
Volts
Watts
°C/W
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
VDS(ON)
I
DSS
I
GSS
g
VGS(TH)
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)557 92 15 15 FAX: (33) 556 47 9761
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
DSS
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (VDS = 10V, ID = 5.5A)
fs
Gate Threshold Voltage (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
1
(ID(ON) = 6.5A, VGS = 10V)
= VGS, ID = 50mA)
DS
APT Website - http://www.advancedpower.com
= 0V, ID = 250 µA)
GS
= V
DS
DSS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
300
250
1000
±100
3.5 4.5
25
UNIT
Volts
6
µA
nA
mhos
Volts
050-4506 Rev C
DYNAMIC CHARACTERISTICS
ARF442/443
Symbol
C
C
C
Characteristic
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Test Conditions
V
= 0V
GS
VDS = 100V
f = 1 MHz
FUNCTIONAL CHARACTERISTICS
Symbol
G
η
G
η
1
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Characteristic
Common Source Amplifier Power Gain
PS1
Drain Efficiency
1
ψ
Electrical Ruggedness VSWR 30:1
Common Source Amplifier Power Gain
PS2
Drain Efficiency
2
Test Conditions
= 100V
V
DD
= 0V
V
GS
P
= 200W
out
f = 13.56MHz
V
= 100V, P
DD
= 50mA, f = 13.56MHz
I
DQ
= 200W
out
TYPICAL 13.56 MHz, 400 WATT PUSH-PULL CLASS 'C' POWER AMPLIFIER CIRCUIT
MIN TYP MAX
UNIT
730 900
100 140
pF
33 50
MIN TYP MAX
17 18.9
73
UNIT
dB
%
No Degradation in Output Power
22
65
dB
%
T1
2:1
R1
10K
RF
Input
C1
L1
75-480pF
0.5µH
C1 = 75-480pF Compression Mica
C2, C3, C4, C5, C6, C7 & C8 = .01µF @ 200V, CK06
C9 = .1µF @ 100V, CK06
C10 = 10µF @ 100V Electrolytic
R1 = 10KΩ, 5%, 1/4W, Carbon
Q1 = ARF442
Q2 = ARF443
L1 = 7.5 T of #18AWG, ID = .438", L = 0.5µH
Q1
Q2
BFC1
C6
.01µF
Parts List
.01µF
C2
T2
C3
.01µF
C4
C5
.01µF .01µF
RFC1
C7
.01µF
C8 C9 C10
.01µF .1µF 10µF (100V)
+
V
DD
RF
Output
= 100V
BFC1 = Balanced DC Feed Choke; 7 T of #22 stranded PTFE twisted pair on an Indiana General #F624-19-Q1 toroid. µi =125
RFC1 = 2 T of #18 stranded PTFE on a Fair-Rite #2677006301 shield bead. µi = 2000
T1 = 4:1 Z Conventional Transformer; 2:1 T of #22 stranded PTFE on a Fair-Rite #2843000202 Balun Core. µi = 850
T2 = 1:1 Z Transmission Line Transformer, using 50Ω coax.
• Coax = 22" of mini 50Ω PTFE coax, OD = .095"
• A large 2-hole balun core was constructed by gluing two Fair-Rite #2643102002, µi = 850 cores together.
• The transformer is constructed by winding 4.5 turns of the coax around the center of the balun core.
PCB = .062" G10 Epoxy Glass.
050-4506 Rev C
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