Advanced Power Technology APT APT8GT60KR Datasheet

G
C
E
TO-220
G
C
E
PRELIMINARY
600
-15 345
1.6 2.0 2.5
2.3 2.8 20
700
±100
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, IC = 0.5mA, Tj = -55°C)
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, IC = 50mA)
Gate Threshold Voltage (V
CE
= VGE, IC = 200µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C) Collector Cut-off Current (V
CE
= V
CES
, VGE = 0V, Tj = 25°C)
Collector Cut-off Current (VCE = V
CES
, VGE = 0V, Tj = 150°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Symbol
BV
CES
RBV
CES
VGE(TH)
V
CE
(ON)
I
CES
I
GES
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
UNIT
Volts
µA
nA
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM1
I
CM2
E
AS
P
D
TJ,T
STG
T
L
Parameter
Collector-Emitter Voltage Collector-Gate Voltage (R
GE
= 20K) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ TC = 25°C
Pulsed Collector Current
1
@ TC = 110°C
Single Pulse Avalanche Energy
2
Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
APT8GT60KR
600 600
15
±20
17
8 34 16
9 70
-55 to 150 300
UNIT
Volts
Amps
mJ
Watts
°C
052-6200 Rev C
APT8GT60KR
600V 17A
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 150KHz
• Low Tail Current • Ultra Low Leakage Current
• Avalanche Rated • RBSOA and SCSOA Rated
Thunderbolt IGBT
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 57 92 15 15 FAX: (33) 5 56 47 97 61
APT Website - http://www.advancedpower.com
PRELIMINARY
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
DYNAMIC CHARACTERISTICS APT8GT60KR
UNIT
°C/W
lb•in
MIN TYP MAX
1.8 80
10
Characteristic
Junction to Case Junction to Ambient Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw
Symbol
R
ΘJC
R
ΘJA
Torque
THERMAL CHARACTERISTICS
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.66V
CES
I
C
= I
C2
RG = 50
Inductive Switching (150°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 50
T
J
= +150°C
Inductive Switching (25
°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 50
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
MIN TYP MAX
355
44 23 32 15
3
7 11 40 90 11
5
100
70
0.05
0.22
0.27 11
5 80 45
0.20
1.2 4.3
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, VCC = 50V, RGE = 25, L = 500µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6200 Rev C
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