Advanced Power Technology APT APT8075BN Datasheet
TO-247
G
D
S
APT8075BN 800V 13.0A 0.75Ω
POWER MOS IV
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS All Ratings: T
Symbol
V
I
V
P
TJ,T
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
DSS
I
D
DM
GS
D
STG
T
L
DSS
(ON)
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
= 0V, ID = 250 µA)
(V
GS
On State Drain Current
(V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
= 25°C unless otherwise specified.
C
APT APT
8075BN 8090BN
800 800
= 25°C
C
1
13 12
56 48
±30
= 25°C
C
310
2.48
-55 to 150
300
MIN TYP MAX
800
250
1000
±100
24
2
= VGS, ID = 1.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
APT8075BN
APT8090BN 800
APT8075BN 13
APT8090BN 12
APT8075BN 0.75
APT8090BN 0.90
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
UNIT
Volts
Amps
Ohms
µA
nA
Volts
APT8090BN 800V 12.0A 0.90Ω
THERMAL CHARACTERISTICS
Symbol
R
R
Characteristic
Junction to Case
θJC
Junction to Ambient
θJA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 1515 FAX: (33) 556 47 9761
MIN TYP MAX
0.40
40
UNIT
°C/W
050-8007 Rev C
DYNAMIC CHARACTERISTICS
Note:
Duty Factor D =
t
1
/
t
2
Peak TJ = PDM x Z
θJC
+ T
C
t
1
t
2
P
DM
APT8075/8090BN
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
td(on)
t
r
td(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
V
DS
f = 1 MHz
V
GS
= 0.5 V
V
DD
ID = ID [Cont.] @ 25°C
V
GS
V
= 0.5 V
DD
ID = ID [Cont.] @ 25°C
R
G
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
Characteristic / Test Conditions / Part Number
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
2
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
t
Q
MIN TYP MAX
= 0V
GS
= 25V
2410 2950
370 520
120 180
= 10V
DSS
88 130
8.9 13
44 67
= 15V
DSS
13 27
18 36
62 94
= 1.8Ω
MIN TYP MAX
APT8075BN
APT8090BN 12
APT8075BN 56
APT8090BN 48
24 48
656 1200
6.2 12
13
1.3
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol
SOA1
SOA2
I
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
LM
Characteristic
Safe Operating Area
Safe Operating Area
Inductive Current Clamped
1.0
0.5
D=0.5
0.2
0.1
0.05
0.02
0.01
, THERMAL IMPEDANCE (°C/W)
θJC
Z
0.1
0.05
0.01
0.005
SINGLE PULSE
Test Conditions / Part Number
V
= 0.4 V
DS
I
= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
DS
, IDS = PD / 0.4 V
DSS
, t = 1 Sec.
DSS
APT8075BN 56
APT8090BN 48
MIN TYP MAX
310
310
UNIT
Watts
Amps
050-8007 Rev C
0.001
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
-1
10
1.0 10
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