Advanced Power Technology APT APT8018JN Datasheet
"UL Recognized" File No. E145592 (S)
D
S
S
G
G
D
SOT-227
S
ISOTOP
®
POWER MOS IV
®
APT8018JN 800V 40A 0.18Ω
SINGLE DIE ISOTOP® PACKAGE
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
APT
Symbol
V
DSS
I
D
IDM, l
LM
V
GS
P
D
TJ,T
STG
T
L
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
1
= 25°C
C
and Inductive Current Clamped
= 25°C
C
8018JN
800
40
160
±30
690
5.52
-55 to 150
300
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
ID(ON)
R
DS
I
DSS
I
GSS
VGS(TH)
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
DSS
(V
= 0V, ID = 250 µA)
GS
On State Drain Current
(V
> ID(ON) x RDS(ON) Max, VGS = 10V)
DS
Drain-Source On-State Resistance
(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
2
= VGS, ID = 5.0mA)
DS
2
= V
DS
= 0.8 V
DS
= ±30V, V
GS
, VGS = 0V)
DSS
, VGS = 0V, TC = 125°C)
DSS
= 0V)
DS
MIN TYP MAX
APT8018JN
APT8018JN 40
APT8018JN 0.18
800
250
1000
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
THERMAL CHARACTERISTICS
Symbol
R
R
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
Characteristic
Junction to Case
ΘJC
Case to Sink
ΘCS
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
MIN TYP MAX
0.05
UNIT
0.18
°C/W
050-8038 Rev E
DYNAMIC CHARACTERISTICS
APT8018JN
Symbol
C
C
C
Q
Q
Q
td(on)
td(off)
Characteristic
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain ("Miller") Charge
gd
Turn-on Delay Time
t
Rise Time
r
Turn-off Delay Time
t
Fall Time
f
Test Conditions
V
VDS = 25V
f = 1 MHz
3
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
V
GS
VDD = 0.5 V
ID = ID [Cont.] @ 25°C
RG = 0.6Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
SM
Characteristic / Test Conditions
Continuous Source Current
S
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
SD
Reverse Recovery Time (I
rr
Reverse Recovery Charge (I
rr
1
2
(VGS = 0V, IS = -ID [Cont.])
= -ID [Cont.], dlS/dt = 100A/µs)
S
= -ID [Cont.], dlS/dt = 100A/µs)
S
Symbol
I
V
t
Q
MIN TYP MAX
GS
= 0V
11715 14000
1430 2000
460 690
= 10V
DSS
468 700
72 110
176 265
= 15V
DSS
21 40
19 40
70 105
13 25
MIN TYP MAX
APT8018JN
APT8018JN 160
945 1800
36 60
40
1.8
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
PACKAGE CHARACTERISTICS
L
L
Characteristic / Test Conditions
Internal Drain Inductance
D
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
S
(Measured From Drain Terminal to Center of Die.)
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance (f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
0.2
D=0.5
0.1
, THERMAL IMPEDANCE (°C/W)
JC
θ
Z
0.05
0.01
0.005
0.001
0.0005
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
-5
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
-4
10
-3
10
RECTANGULAR PULSE DURATION (SECONDS)
-2
10
MIN TYP MAX
2500
Note:
DM
P
Duty Factor D =
Peak TJ = PDM x Z
-1
10
1.0 10
Symbol
V
Isolation
C
Isolation
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
050-8038 Rev E
UNIT
3
nH
5
Volts
70
13
t
1
t
2
t
1
/
t
2
+ T
θJC
C
pF
in-lbs
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