Advanced Power Technology APT APT8014JLL Datasheet

APT8014JLL

800V 42A 0.140W

POWER MOS 7

TM

S

S

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7
and Qg. Power MOS 7

TM

combines lower conduction and switching losses

TM

by significantly lowering R

DS(ON)

along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.

G

ISOTOP

D

®

SOT-227

"UL Recognized"

D

• Lower Input Capacitance • Increased Power Dissipation

• Lower Miller Capacitance •Easier To Drive

• Lower Gate Charge, Qg •Popular SOT-227 Package

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

I

DM

V

V

GSM

P

TJ,T

T

I

AR

E
E

Parameter

Drain-Source Voltage
Continuous Drain Current @ T

D

Pulsed Drain Current
Gate-Source Voltage Continuous

GS

Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C

D

Linear Derating Factor
Operating and Storage Junction Temperature Range

STG

Lead Temperature: 0.063" from Case for 10 Sec.

L

Avalanche Current
Repetitive Avalanche Energy

AR

Single Pulse Avalanche Energy

AS

ADVANCE TECHNICAL

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

1

4

INFORMATION

G

APT8014JLL

800

42
168
±30
±40
595

4.76

-55 to 150
300

42
50

3200

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

D[Cont.]

, VGS = 0V)

DSS

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

)

MIN TYP MAX

800

42

35

0.140
100
500

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-7105 Rev - 9-2001

DYNAMIC CHARACTERISTICS APT8014JLL

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

V

GS

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t

Q

dv

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current

ADVANCE TECHNICAL

Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

/

Peak Diode Recovery dv/

dt

1

(Body Diode)

dt

INFORMATION

, dlS/dt = 100A/µs)

D[Cont.]

= -I

S

5

, dlS/dt = 100A/µs)

D[Cont.]

D[Cont.]

)

= 0V

GS

= 10V

= 15V

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

7710
1480

244
284

37

161

20
19
69
15

MIN TYP MAX

42

168

1.3

930

29.0
10

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

V/ns

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

3

See MIL-STD-750 Method 3471

4

Starting T

5dv

/

dt

device itself. I

+25°C, L = 3.63mH, R

j

=

numbers reflect the limitations of the test circuit rather than the

£ -I

S

D[Cont.

di

]

SOT-227 (ISOTOP®) Package Outline

11.8 (.463)

31.5 (1.240)

31.7 (1.248)

7.8 (.307)

8.2 (.322)

r = 4.0 (.157)
(2 places)

14.9 (.587)

15.1 (.594)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-7105 Rev - 9-2001

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

W=4.1 (.161)
W=4.3 (.169)

H=4.8 (.187)
H=4.9 (.193)

(4 places)

4.0 (.157)

4.2 (.165)
(2 places)

3.3 (.129)

3.6 (.143)

* Source Drain

* Source

12.2 (.480)

8.9 (.350)

9.6 (.378)

1.95 (.077)

2.14 (.084)

Hex Nut M4
(4 places)

0.75 (.030)

0.85 (.033)

12.6 (.496)

12.8 (.504)

*

Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

Gate

MIN TYP MAX

0.21
40

25W, Peak IL = 42A

G

=

/

£ 700A/µs V

dt

25.2 (0.992)

25.4 (1.000)

£ V

R

DSS

T

UNIT

°C/W

£ 150°C

J