Advanced Power Technology APT APT60M80L2VR Datasheet

APT60M80L2VR

600V 65A 0.080W

POWER MOS V

®

TO-264

600

65
260
±30
±40
830

6.64

300

65

50

3200

Max

D

G

S

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

Amps

mJ

Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V

®

also achieves faster switching speeds through optimized gate layout.

• TO-264 MAX Package • 100% Avalanche Tested

• Faster Switching

• Lower Leakage

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

TJ,T

STG

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy

ADVANCE TECHNICAL

Single Pulse Avalanche Energy

1

1

(Repetitive and Non-Repetitive)

= 25°C

C

= 25°C

C

1

4

INFORMATION

APT60M80L2VR

-55 to 150

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

I

D(on)

R

DS(on)

I

DSS

I

GSS

V

GS(th)

USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]
EUROPE Chemin de Magret F-33700 Merignac - France Phone: [phone] FAX: [phone]

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current
Drain-Source On-State Resistance

Zero Gate Voltage Drain Current (VDS = V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (VGS = ±30V, V
Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

2

(V

DS

APT Website - http://www.advancedpower.com

= 0V, ID = 250µA)

GS

> I

x R

D(on)

2

(VGS = 10V, 0.5 I

DSS

= 0.8 V

DS

Max, VGS = 10V)

DS(on)

)

D[Cont.]

, VGS = 0V)

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

MIN TYP MAX

600

65

24

0.080
25

250

±100

UNIT

Volts

Amps
Ohms

µA

nA

Volts

050-5991 rev- 2-2001

DYNAMIC CHARACTERISTICS APT60M80L2VR

Symbol

C
C
C

Q
Q
Q

t

d(on)

t

d(off)

Characteristic

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer Capacitance

rss

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain ("Miller") Charge

gd

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay Time

t

Fall Time

f

Test Conditions

V

VDS = 25V

f = 1 MHz

3

V

GS

VDD = 0.5 V

ID = 0.5 I

VGS = 15V

VDD = 0.5 V

ID = I

D[Cont.]

RG = 0.6W

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

I

I

SM

V

t
Q

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

1

Pulsed Source Current
Diode Forward Voltage 2 (VGS = 0V, IS = -I

SD

Reverse Recovery Time (IS = -I

rr

Reverse Recovery Charge (I

rr

ADVANCE TECHNICAL

(Body Diode)

)

INFORMATION

D[Cont.]

= -I

S

D[Cont.]

D[Cont.]

, dlS/dt = 100A/µs)

, dlS/dt = 100A/µs)

= 0V

GS

= 10V

D[Cont.]

DSS

@ 25°C

DSS

@ 25°C

MIN TYP MAX

12490

1450

560
530

64

240

18
17
80
12

MIN TYP MAX

65

260

1.3

800

22

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns

µC

THERMAL CHARACTERISTICS

Symbol

R

qJC

R

qJA

1

Repetitive Rating: Pulse width limited by maximum junction
temperature.

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

Characteristic

Junction to Case
Junction to Ambient

3

See MIL-STD-750 Method 3471

4

Starting T

+25°C, L = 1.51mH, R

j

=

TO-264 MAXTM(L2) Package Outline

4.60 (.181)

5.21 (.205)

1.80 (.071)

2.01 (.079)

5.79 (.228)

6.20 (.244)

25.48 (1.003)

Drain

Dimensions in Millimeters and (Inches)

APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336

050-5991 rev- 2-2001

26.49 (1.043)

2.29 (.090)

2.69 (.106)

19.81 (.780)

21.39 (.842)

0.48 (.019)

0.84 (.033)

2.59 (.102)

3.00 (.118)

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058

0.76 (.030)

1.30 (.051)

5.45 (.215) BSC

2.79 (.110)

3.18 (.125)

2-Plcs.

19.51 (.768)

20.50 (.807)

2.29 (.090)

2.69 (.106)

Gate
Drain
Source

MIN TYP MAX

0.15
40

25W, Peak IL = 65A

G

=

UNIT

°C/W