Advanced Power Technology APT APT60GT60JRD Datasheet
APT60GT60JRD
SOT-227
G
E
E
C
ISOTOP
®
"UL Recognized"
Thunderbolt IGBT™ & FRED
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ combined
with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers
superior ruggedness and ultrafast switching speed.
600V 90A
• Low Forward Voltage Drop • High Freq. Switching to 150KHz
C
• Low Tail Current • Ultra Low Leakage Current
• Ultrafast Soft Recovery • RBSOA and SCSOA Rated
G
Antiparallel Diode
E
MAXIMUM RATINGS (IGBT) All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM1
I
CM2
P
D
TJ,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Pulsed Collector Current
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
= 20KΩ)
GE
= 25°C
C
= 110°C
C
1
@ TC = 25°C
1
@ TC = 110°C
APT60GF60JRD
600
600
±20
90
60
180
120
375
-55 to 150
300
UNIT
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS (IGBT)
Symbol
BV
VGE(TH)
V
CE
I
CES
I
GES
USA
405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33)5 5792 15 15 FAX: (33) 556 4797 61
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Gate Threshold Voltage (V
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 25°C)
(ON)
Collector-Emitter On Voltage (VGE = 15V, IC = IC2, Tj = 150°C)
Collector Cut-off Current (V
Collector Cut-off Current (VCE = V
Gate-Emitter Leakage Current (V
PRELIMINARY
= VGE, IC = 700µA, Tj = 25°C)
CE
= V
CE
CES
CES
GE
= 0V, IC = 0.5mA)
GE
, VGE = 0V, Tj = 25°C)
, VGE = 0V, Tj = 125°C)
= ±20V, V
CE
= 0V)
MIN TYP MAX
600
345
1.6 2.0 2.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
2.8
0.3
3.0
±100
UNIT
Volts
mA
nA
052-6260 Rev B
DYNAMIC CHARACTERISTICS (IGBT) APT60GT60JRD
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
3
3
Total Switching Losses
Turn-on Delay Time
Rise Time
PRELIMINARY
Turn-off Delay Time
Fall Time
Total Switching Losses
3
Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.8V
CC
CES
I
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.8V
CC
CES
I
= I
C
C2
RG = 5Ω
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
T
J
= 15V
GE
I
= I
C
C2
R
= 5Ω
G
= +150°C
CES
Inductive Switching (25°C)
V
(Peak) = 0.66V
CLAMP
V
T
= 20V, I
V
CE
= 15V
GE
I
= I
C
R
= 5Ω
G
= +25°C
J
C2
CES
= I
C
C2
MIN TYP MAX
3200
400
180
280
120
20
14
55
200
140
25
75
300
95
1.9
2.4
4.3
25
75
260
90
3.8
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED)
Symbol
R
ΘJC
R
ΘJA
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
See MIL-STD-750 Method 3471
3
These switching losses are a combination of both the FRED and the IGBT.
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6260 Rev B
Characteristic
Junction to Case (IGBT)
Junction to Case (FRED)
Junction to Ambient
Package Weight
T
Mounting Torque (
Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
MIN TYP MAX
0.33
0.66
20
1.03
29.2
13.6
1.5
UNIT
°C/W
oz
gm
lb•in
N•m
Loading...