Advanced Power Technology APT APT60GT60JR Datasheet

APT60GT60JR
600V 90A
Thunderbolt IGBT
The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
E
G
E
C
SOT-227
ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop • High Freq. Switching to 150KHz
ISOTOP
C
"UL Recognized"
®
• Low Tail Current • Ultra Low Leakage Current
• Avalanche Rated • RBSOA and SCSOA Rated
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol
V
CES
V
CGR
V V
I I
I
CM1
I
CM2
E
P
TJ,T
T
Parameter
Collector-Emitter Voltage Collector-Gate Voltage (R Emitter-Collector Voltage
EC
Gate-Emitter Voltage
GE
Continuous Collector Current @ T
C1
Continuous Collector Current @ T
C2
Pulsed Collector Current Pulsed Collector Current Single Pulse Avalanche Energy
AS
Total Power Dissipation
D
Operating and Storage Junction Temperature Range
STG
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
= 20KW)
GE
= 25°C
C
= 95°C
C
1
@ TC = 25°C
1
@ TC = 95°C
2
G
APT60GT60JR
600 600
15
±20
90
60 180 120
65 375
-55 to 150 300
E
UNIT
Volts
Amps
mJ
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
RBV
VGE(TH)
V
CE
I
CES
I
GES
USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33)5 57 9 2 15 15 FAX: (33)5 56 47 9761
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
CES
Collector-Emitter Reverse Breakdown Voltage (V
CES
Gate Threshold Voltage (V Collector-Emitter On Voltage (V
(ON)
Collector-Emitter On Voltage (V Collector Cut-off Current (V Collector Cut-off Current (V Gate-Emitter Leakage Current (V
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
= VGE, IC = 700µA, Tj = 25°C)
CE
= 15V, IC = IC2, Tj = 25°C)
GE
= 15V, IC = IC2, Tj = 150°C)
GE
= V
CE
CES
= V
CE
CES
GE
APT Website - http://www.advancedpower.com
= 0V, IC = 0.5mA, Tj = -55°C)
GE
= 0V, IC = 50mA)
GE
, VGE = 0V, Tj = 25°C) , VGE = 0V, Tj = 150°C)
= ±20V, V
CE
= 0V)
MIN TYP MAX
600
-15 345
1.6 2.0 2.5
2000 ±100
UNIT
Volts
µA
nA
052-6221 Rev A 9-2000
DYNAMIC CHARACTERISTICS APT60GT60JR
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
td(on)
t
r
td(off)
t
f
td(on)
t
r
td(off)
t
f
E
on
E
off
E
ts
td(on)
t
r
td(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Switching Losses Forward Transconductance
Test Conditions
Capacitance
= 0V
V
GE
V
= 25V
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 0.66V
CC
I
CES
= I
C
C2
Resistive Switching (25°C)
= 15V
V
GE
V
= 0.66V
CC
I
CES
= I
C
C2
RG = 5W
Inductive Switching (150°C)
V
(Peak) = 0.66V
CLAMP
V
GE
I
C
R
G
= +150°C
T
J
= 15V
= I
C2
= 5W
CES
Inductive Switching (25°C)
V
(Peak) = 0.66V
CLAMP
V
CE
V
= 15V
GE
= I
I
C
R
= 5W
G
T
= +25°C
J
= 20V, I
C2
CES
= I
C
C2
MIN TYP MAX
3200
310 180
280 120
20 14
55 190 140
25
75 300
95
260
90
6
UNIT
pF
nC
ns
ns
mJ
ns
mJ
S
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
QJC
R
W
Torque
1
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
IC = IC2, RGE = 25W, L = 100µH, Tj = 25°C
3
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
052-6221 Rev A 9-2000
Characteristic
Junction to Case Junction to Ambient
QJA
Package Weight
T
Mounting Torque (
Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machine)
MIN TYP MAX
0.33 20
1.03
29.2 10
UNIT
°C/W
oz
gm lbin Nm
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