Advanced Power Technology APT APT6035BN Datasheet

D

G

S

POWER MOS IV

TO-247

APT6035BN 600V 19.0A 0.35Ω

®

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

Symbol

V

DSS

I

D

I

DM

V

GS

P

D

TJ,T

STG

T

L

Parameter

Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current

1

= 25°C

C

Gate-Source Voltage
Total Power Dissipation @ T

= 25°C

C

Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.

APT6035BN

600

19

76
±30
310

2.5

-55 to 150
300

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV
ID(ON)

R

DS

I

DSS

I

GSS

VGS(TH)

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

DSS

On State Drain Current

(ON)

Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V

2

(V

> ID(ON) x RDS(ON) Max, VGS = 10V)

DS

GS

= VGS, ID = 1.0mA)

DS

= 0V, ID = 250µA)

GS

2

(VGS = 10V, 0.5 ID [Cont.])

= V

DSS

= 0.8 V

, VGS = 0V)

, VGS = 0V, TC = 125°C)

DSS

= 0V)

DS

DS

DS

= ±30V, V

MIN TYP MAX

600

19

2 4

THERMAL CHARACTERISTICS

Symbol

R
R

Characteristic

Junction to Case

θJC

Junction to Ambient

θJA

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

MIN TYP MAX

0.35
250

1000
±100

0.40

40

UNIT

Volts
Amps
Ohms

µA

nA

Volts

UNIT

°C/W

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: [phone] FAX: [phone]

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: [phone] FAX: [phone]

050-6107 Rev B

DYNAMIC CHARACTERISTICS

APT6035BN

Symbol

C

iss

C

oss

C

rss

Q

g

Q

gs

Q

gd

td(on)

t

r

td(off)

t

f

Characteristic

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge

3

Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time

Test Conditions

V

VDS = 25V

f = 1 MHz

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

V

GS

VDD = 0.5 V

ID = ID [Cont.] @ 25°C

RG = 1.8Ω

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

I

SM

Characteristic / Test Conditions

Continuous Source Current (Body Diode)

S

Pulsed Source Current
Diode Forward Voltage

SD

Reverse Recovery Time (I

rr

Reverse Recovery Charge (I

rr

1

(Body Diode)

2

(VGS = 0V, IS = -ID [Cont.])

= -ID [Cont.], dlS/dt = 100A/µs)

S

= -ID [Cont.], dlS/dt = 100A/µs)

S

Symbol

I

V

t

Q

= 0V

GS

= 10V

= 15V

DSS

DSS

MIN TYP MAX

2400 2950

436 610
154 230

87 130
11 16
46 69
14 28
23 46
63 95
23 46

MIN TYP MAX

19
76

1.3

152 334 668

2.5 5 10

UNIT

pF

nC

ns

UNIT

Amps

Volts

ns
µC

SAFE OPERATING AREA CHARACTERISTICS

Symbol

SOA1
SOA2

I

1

Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2

Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3

See MIL-STD-750 Method 3471

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-6107 Rev B

Characteristic

Safe Operating Area
Safe Operating Area
Inductive Current Clamped

LM

1.0

0.5
D=0.5

0.1

0.05

0.01

0.005

0.001
10

0.2

0.05

0.02

0.01

-5

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.1

SINGLE PULSE

-4

10

Test Conditions

V

= 0.4 V

DS

I

= ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.

DS

-3

10

RECTANGULAR PULSE DURATION (SECONDS)

, IDS = PD / 0.4 V

DSS

10

, t = 1 Sec.

DSS

-2

10

-1

MIN TYP MAX

310
310

76

Note:

DM

P

Duty Factor D =

Peak TJ = PDM x Z

1.0 10

UNIT

Watts

Amps

t

1

t

2

t

1

/

t

2

+ T

θJC

C